MTP20N15E
- Mfr.Part #
- MTP20N15E
- Manufacturer
- onsemi
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- MOSFET N-CH 150V 20A TO220AB
- Stock
- 36
- In Stock :
- 36
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Power Dissipation :
- 112W
- Transistor Element Material :
- SILICON
- FET Type :
- N-Channel
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Reach Compliance Code :
- not_compliant
- Pbfree Code :
- No
- Power Dissipation-Max :
- 112W Tc
- Peak Reflow Temperature (Cel) :
- 240
- Pulsed Drain Current-Max (IDM) :
- 60A
- Current Rating :
- 20A
- Rise Time :
- 77ns
- Case Connection :
- DRAIN
- Avalanche Energy Rating (Eas) :
- 60 mJ
- Number of Terminations :
- 3
- Element Configuration :
- Single
- Packaging :
- Tube
- ECCN Code :
- EAR99
- Operating Temperature :
- -55°C~150°C TJ
- Pin Count :
- 3
- Vgs (Max) :
- ±20V
- Transistor Application :
- SWITCHING
- Drain to Source Breakdown Voltage :
- 150V
- JESD-609 Code :
- e0
- Fall Time (Typ) :
- 49 ns
- Rds On (Max) @ Id, Vgs :
- 130m Ω @ 10A, 10V
- Gate Charge (Qg) (Max) @ Vgs :
- 55.9nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds :
- 1627pF @ 25V
- Voltage - Rated DC :
- 150V
- Gate to Source Voltage (Vgs) :
- 20V
- Continuous Drain Current (ID) :
- 20A
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Lead Free :
- Contains Lead
- Current - Continuous Drain (Id) @ 25°C :
- 20A Tc
- Number of Pins :
- 3
- RoHS Status :
- Non-RoHS Compliant
- JEDEC-95 Code :
- TO-220AB
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Number of Elements :
- 1
- Turn-Off Delay Time :
- 33 ns
- Mounting Type :
- Through Hole
- Mount :
- Through Hole
- Terminal Finish :
- Tin/Lead (Sn80Pb20)
- Package / Case :
- TO-220-3
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Operating Mode :
- ENHANCEMENT MODE
- Published :
- 2000
- Qualification Status :
- Not Qualified
- Datasheets
- MTP20N15E

N-Channel Tube 130m Ω @ 10A, 10V ±20V 1627pF @ 25V 55.9nC @ 10V TO-220-3
Description
The MTP20N15E is a Power MOSFET with 20 Amps, 150 Volts N?Channel TO?220. High energy can be withstood by this Power MOSFET in the avalanche and commutation modes. Another feature of the energy-efficient design is a drain-to-source diode with a quick recovery period. These devices are especially well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients. They are designed for low voltage, high-speed switching applications in power converters and PWM motor controls.
Features
-
Diode is Characterized for Use in Bridge Circuits
-
IDSS and VDS(on) Specified at Elevated Temperature
-
This is a Pb?Free Device*
-
Avalanche Energy Specified
-
Source?to?Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode
Applications
-
Low voltage
-
High speed switching applications in power converters
-
PWM motor controls
-
Solar inverters
-
Automotive applications
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