MTP23P06VG

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Pulsed Drain Current-Max (IDM) :

81A

Mounting Type :

Through Hole

Input Capacitance (Ciss) (Max) @ Vds :

1.62pF @ 25V

Packaging :

Tube

Pbfree Code :

No

Pin Count :

3

Drain to Source Voltage (Vdss) :

60V

Rds On (Max) @ Id, Vgs :

120m Ω @ 11.5A, 10V

Number of Terminations :

3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Elements :

1

Vgs (Max) :

±15V

JESD-30 Code :

R-PSFM-T3

Gate Charge (Qg) (Max) @ Vgs :

50nC @ 10V

Terminal Finish :

MATTE TIN

Current - Continuous Drain (Id) @ 25°C :

23A Tc

Additional Feature :

AVALANCHE RATED

Configuration :

SINGLE WITH BUILT-IN DIODE

JEDEC-95 Code :

TO-220AB

Qualification Status :

COMMERCIAL

JESD-609 Code :

e3

Case Connection :

DRAIN

Operating Temperature :

-55°C~175°C TJ

Surface Mount :

No

DS Breakdown Voltage-Min :

60V

Package / Case :

TO-220-3

Terminal Position :

Single

Vgs(th) (Max) @ Id :

4V @ 250µA

Drain Current-Max (Abs) (ID) :

23A

Drive Voltage (Max Rds On,Min Rds On) :

10V

Drain-source On Resistance-Max :

0.12Ohm

Transistor Element Material :

SILICON

Peak Reflow Temperature (Cel) :

260

Power Dissipation-Max :

90W Tc

Operating Mode :

ENHANCEMENT MODE

FET Type :

P-Channel

RoHS Status :

ROHS3 Compliant

Transistor Application :

SWITCHING

Time@Peak Reflow Temperature-Max (s) :

40

Avalanche Energy Rating (Eas) :

794 mJ