MTP23P06VG

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

DS Breakdown Voltage-Min :

60V

Mounting Type :

Through Hole

Drain to Source Voltage (Vdss) :

60V

Transistor Application :

SWITCHING

Input Capacitance (Ciss) (Max) @ Vds :

1.62pF @ 25V

Number of Terminations :

3

Surface Mount :

No

Rds On (Max) @ Id, Vgs :

120m Ω @ 11.5A, 10V

RoHS Status :

ROHS3 Compliant

Pulsed Drain Current-Max (IDM) :

81A

Package / Case :

TO-220-3

Drive Voltage (Max Rds On,Min Rds On) :

10V

Time@Peak Reflow Temperature-Max (s) :

40

Operating Temperature :

-55°C~175°C TJ

Avalanche Energy Rating (Eas) :

794 mJ

FET Type :

P-Channel

Configuration :

SINGLE WITH BUILT-IN DIODE

Number of Elements :

1

Case Connection :

DRAIN

Drain Current-Max (Abs) (ID) :

23A

Terminal Position :

Single

Operating Mode :

ENHANCEMENT MODE

Additional Feature :

AVALANCHE RATED

Current - Continuous Drain (Id) @ 25°C :

23A Tc

JESD-609 Code :

e3

Terminal Finish :

MATTE TIN

Vgs (Max) :

±15V

Qualification Status :

COMMERCIAL

Transistor Element Material :

SILICON

Peak Reflow Temperature (Cel) :

260

Vgs(th) (Max) @ Id :

4V @ 250µA

JESD-30 Code :

R-PSFM-T3

Drain-source On Resistance-Max :

0.12Ohm

JEDEC-95 Code :

TO-220AB

Packaging :

Tube

Pbfree Code :

No

Power Dissipation-Max :

90W Tc

Pin Count :

3

Gate Charge (Qg) (Max) @ Vgs :

50nC @ 10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)