MTP2P50E
- Mfr.Part #
- MTP2P50E
- Manufacturer
- onsemi
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- MOSFET P-CH 500V 2A TO220AB
- Stock
- 20
- In Stock :
- 20
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Power Dissipation-Max :
- 75W Tc
- Drain-source On Resistance-Max :
- 6Ohm
- Width :
- 4.82mm
- Operating Mode :
- ENHANCEMENT MODE
- Fall Time (Typ) :
- 19 ns
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Voltage - Rated DC :
- -500V
- Qualification Status :
- Not Qualified
- Reach Compliance Code :
- not_compliant
- Additional Feature :
- High Voltage
- Number of Terminations :
- 3
- Published :
- 2000
- Element Configuration :
- Single
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Case Connection :
- DRAIN
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Vgs (Max) :
- ±20V
- Drain to Source Breakdown Voltage :
- -500V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- JESD-609 Code :
- e0
- Avalanche Energy Rating (Eas) :
- 80 mJ
- Turn-Off Delay Time :
- 21 ns
- Turn On Delay Time :
- 12 ns
- Mounting Type :
- Through Hole
- Length :
- 10.28mm
- Input Capacitance (Ciss) (Max) @ Vds :
- 1183pF @ 25V
- Pbfree Code :
- No
- Gate Charge (Qg) (Max) @ Vgs :
- 27nC @ 10V
- Peak Reflow Temperature (Cel) :
- 240
- Drain to Source Voltage (Vdss) :
- 500V
- Pin Count :
- 3
- Terminal Finish :
- Tin/Lead (Sn/Pb)
- Number of Elements :
- 1
- Rise Time :
- 14ns
- Lifecycle Status :
- LAST SHIPMENTS (Last Updated: 5 days ago)
- Operating Temperature :
- -55°C~150°C TJ
- Lead Free :
- Contains Lead
- RoHS Status :
- Non-RoHS Compliant
- Package / Case :
- TO-220-3
- Pulsed Drain Current-Max (IDM) :
- 6A
- Continuous Drain Current (ID) :
- 2A
- Mount :
- Through Hole
- Transistor Element Material :
- SILICON
- ECCN Code :
- EAR99
- Gate to Source Voltage (Vgs) :
- 20V
- Packaging :
- Tube
- Transistor Application :
- SWITCHING
- Power Dissipation :
- 75W
- Height :
- 9.28mm
- Current Rating :
- -2A
- Rds On (Max) @ Id, Vgs :
- 6 Ω @ 1A, 10V
- Current - Continuous Drain (Id) @ 25°C :
- 2A Tc
- FET Type :
- P-Channel
- Number of Pins :
- 3
- Drain Current-Max (Abs) (ID) :
- 2A
- JEDEC-95 Code :
- TO-220AB
- Datasheets
- MTP2P50E

P-Channel Tube 6 Ω @ 1A, 10V ±20V 1183pF @ 25V 27nC @ 10V 500V TO-220-3
MTP2P50E Description
An upgraded termination strategy is used by this high voltage MOSFET to deliver improved voltage blocking without deteriorating performance over time. In the avalanche and commutation modes, this Power MOSFET is also built to handle tremendous energy.
Another feature of the energy-efficient design is a drain-to-source diode with a quick recovery period. These devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients. They are designed for high voltage, high speed switching applications in power supplies, converters, and PWM motor controls.
MTP2P50E Features
-
Robust High Voltage Termination
-
Avalanche Energy Specified
-
Source?to?Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode
-
Diode is Characterized for Use in Bridge Circuits
-
IDSS and VDS(on) Specified at Elevated Temperature
-
This is a Pb?Free Device*
MTP2P50E Applications
-
Power Management
-
Consumer Electronics
-
Portable Devices
-
Industrial
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