MTP2P50E

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Mfr.Part #
MTP2P50E
Manufacturer
onsemi
Package / Case
TO-220-3
Datasheet
Download
Description
MOSFET P-CH 500V 2A TO220AB
Stock
20
In Stock :
20

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Manufacturer :
onsemi
Product Category :
Transistors - FETs, MOSFETs - Single
Power Dissipation-Max :
75W Tc
Drain-source On Resistance-Max :
6Ohm
Width :
4.82mm
Operating Mode :
ENHANCEMENT MODE
Fall Time (Typ) :
19 ns
Vgs(th) (Max) @ Id :
4V @ 250µA
Voltage - Rated DC :
-500V
Qualification Status :
Not Qualified
Reach Compliance Code :
not_compliant
Additional Feature :
High Voltage
Number of Terminations :
3
Published :
2000
Element Configuration :
Single
Time@Peak Reflow Temperature-Max (s) :
30
Case Connection :
DRAIN
Drive Voltage (Max Rds On,Min Rds On) :
10V
Vgs (Max) :
±20V
Drain to Source Breakdown Voltage :
-500V
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
JESD-609 Code :
e0
Avalanche Energy Rating (Eas) :
80 mJ
Turn-Off Delay Time :
21 ns
Turn On Delay Time :
12 ns
Mounting Type :
Through Hole
Length :
10.28mm
Input Capacitance (Ciss) (Max) @ Vds :
1183pF @ 25V
Pbfree Code :
No
Gate Charge (Qg) (Max) @ Vgs :
27nC @ 10V
Peak Reflow Temperature (Cel) :
240
Drain to Source Voltage (Vdss) :
500V
Pin Count :
3
Terminal Finish :
Tin/Lead (Sn/Pb)
Number of Elements :
1
Rise Time :
14ns
Lifecycle Status :
LAST SHIPMENTS (Last Updated: 5 days ago)
Operating Temperature :
-55°C~150°C TJ
Lead Free :
Contains Lead
RoHS Status :
Non-RoHS Compliant
Package / Case :
TO-220-3
Pulsed Drain Current-Max (IDM) :
6A
Continuous Drain Current (ID) :
2A
Mount :
Through Hole
Transistor Element Material :
SILICON
ECCN Code :
EAR99
Gate to Source Voltage (Vgs) :
20V
Packaging :
Tube
Transistor Application :
SWITCHING
Power Dissipation :
75W
Height :
9.28mm
Current Rating :
-2A
Rds On (Max) @ Id, Vgs :
6 Ω @ 1A, 10V
Current - Continuous Drain (Id) @ 25°C :
2A Tc
FET Type :
P-Channel
Number of Pins :
3
Drain Current-Max (Abs) (ID) :
2A
JEDEC-95 Code :
TO-220AB
Datasheets
MTP2P50E
Introducing Transistors - FETs, MOSFETs - Single onsemi MTP2P50E from Chip IC,where excellence meets affordability. This product stands out with its Number of Terminations:3, Mounting Type:Through Hole, Operating Temperature:-55°C~150°C TJ, Package / Case:TO-220-3, Number of Pins:3, MTP2P50E pinout, MTP2P50E datasheet PDF, MTP2P50E amp .Beyond Transistors - FETs, MOSFETs - Single onsemi MTP2P50E ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi MTP2P50E


P-Channel Tube 6 Ω @ 1A, 10V ±20V 1183pF @ 25V 27nC @ 10V 500V TO-220-3

MTP2P50E Description


An upgraded termination strategy is used by this high voltage MOSFET to deliver improved voltage blocking without deteriorating performance over time. In the avalanche and commutation modes, this Power MOSFET is also built to handle tremendous energy.

Another feature of the energy-efficient design is a drain-to-source diode with a quick recovery period. These devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients. They are designed for high voltage, high speed switching applications in power supplies, converters, and PWM motor controls.



MTP2P50E Features


  • Robust High Voltage Termination

  • Avalanche Energy Specified

  • Source?to?Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode

  • Diode is Characterized for Use in Bridge Circuits

  • IDSS and VDS(on) Specified at Elevated Temperature

  • This is a Pb?Free Device*



MTP2P50E Applications


  • Power Management

  • Consumer Electronics

  • Portable Devices

  • Industrial


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