MS652S

Manufacturer :

Microsemi

Product Category :

Transistors - Bipolar (BJT) - RF

Frequency - Transition :

450MHz~512MHz

Terminal Position :

Radial

Pbfree Code :

No

Polarity/Channel Type :

NPN

RoHS Status :

RoHS Compliant

Published :

2003

Gain :

10dB

Transistor Type :

NPN

Collector Emitter Voltage (VCEO) :

16V

Max Power Dissipation :

25W

Configuration :

Single

Package / Case :

M123

Pin Count :

4

Terminal Form :

Flat

Highest Frequency Band :

ULTRA HIGH FREQUENCY B

Transistor Application :

AMPLIFIER

Number of Elements :

1

Lifecycle Status :

IN PRODUCTION (Last Updated: 1 month ago)

Number of Pins :

4

Mount :

Chassis Mount, Surface Mount

Number of Terminations :

4

Power - Max :

25W

Max Collector Current :

2A

Collector Base Voltage (VCBO) :

36V

Radiation Hardening :

No

DC Current Gain (hFE) (Min) @ Ic, Vce :

10 @ 200mA 5V

Collector Emitter Breakdown Voltage :

16V

Terminal Finish :

TIN LEAD

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Collector-Base Capacitance-Max :

15pF

JESD-609 Code :

e0

ECCN Code :

EAR99

Packaging :

Bulk

Transistor Element Material :

SILICON

Mounting Type :

Chassis Mount

Operating Temperature :

200°C TJ