MPSW55G

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Mfr.Part #
MPSW55G
Manufacturer
onsemi
Package / Case
TO-226-3, TO-92-3 Long Body
Datasheet
Download
Description
TRANS PNP 60V 0.5A TO92
Stock
3,470
In Stock :
3,470

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Manufacturer :
onsemi
Product Category :
Transistors - Bipolar (BJT) - Single
Transistor Type :
PNP
Terminal Position :
BOTTOM
Qualification Status :
COMMERCIAL
JESD-609 Code :
e1
Number of Elements :
1
Package / Case :
TO-226-3, TO-92-3 Long Body
Time@Peak Reflow Temperature-Max (s) :
40
Current - Collector (Ic) (Max) :
500mA
RoHS Status :
ROHS3 Compliant
Configuration :
Single
Mounting Type :
Through Hole
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Reach Compliance Code :
Unknown
JESD-30 Code :
O-PBCY-T3
Pin Count :
3
Power - Max :
1W
Peak Reflow Temperature (Cel) :
260
Transistor Application :
AMPLIFIER
Polarity/Channel Type :
PNP
Current - Collector Cutoff (Max) :
500nA
Vce Saturation (Max) @ Ib, Ic :
500mV @ 10mA, 250mA
Voltage - Collector Emitter Breakdown (Max) :
60V
Packaging :
Bulk
Transition Frequency :
50MHz
Number of Terminations :
3
Pbfree Code :
No
Transistor Element Material :
SILICON
Frequency - Transition :
50MHz
Operating Temperature :
-55°C~150°C TJ
DC Current Gain (hFE) (Min) @ Ic, Vce :
50 @ 250mA 1V
Surface Mount :
No
Terminal Finish :
TIN SILVER COPPER
Datasheets
MPSW55G
Introducing Transistors - Bipolar (BJT) - Single onsemi MPSW55G from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:TO-226-3, TO-92-3 Long Body, Mounting Type:Through Hole, Number of Terminations:3, Operating Temperature:-55°C~150°C TJ, MPSW55G pinout, MPSW55G datasheet PDF, MPSW55G amp .Beyond Transistors - Bipolar (BJT) - Single onsemi MPSW55G ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi MPSW55G


PNP -55°C~150°C TJ 500nA 1 Elements 3 Terminations SILICON PNP TO-226-3, TO-92-3 Long Body Bulk Through Hole

MPSW55G Overview


As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 50 @ 250mA 1V.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 500mV @ 10mA, 250mA.The part has a transition frequency of 50MHz.Device displays Collector Emitter Breakdown (60V maximal voltage).

MPSW55G Features


the DC current gain for this device is 50 @ 250mA 1V
the vce saturation(Max) is 500mV @ 10mA, 250mA
a transition frequency of 50MHz


MPSW55G Applications


There are a lot of Rochester Electronics, LLC
MPSW55G applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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