MPSW55

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Mfr.Part #
MPSW55
Manufacturer
onsemi
Package / Case
TO-226-3, TO-92-3 Long Body
Datasheet
Download
Description
TRANS PNP 60V 0.5A TO92
Stock
3,332
In Stock :
3,332

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Manufacturer :
onsemi
Product Category :
Transistors - Bipolar (BJT) - Single
Terminal Finish :
Tin/Lead (Sn/Pb)
Time@Peak Reflow Temperature-Max (s) :
30
Number of Elements :
1
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Peak Reflow Temperature (Cel) :
240
Transition Frequency :
50MHz
Base Part Number :
MPSW55
Lead Free :
Contains Lead
Current - Collector (Ic) (Max) :
500mA
RoHS Status :
Non-RoHS Compliant
HTS Code :
8541.29.00.75
Mounting Type :
Through Hole
Emitter Base Voltage (VEBO) :
4V
Polarity/Channel Type :
PNP
DC Current Gain (hFE) (Min) @ Ic, Vce :
50 @ 250mA 1V
Element Configuration :
Single
Transistor Application :
AMPLIFIER
Collector Emitter Saturation Voltage :
-500mV
Collector Base Voltage (VCBO) :
-60V
Number of Terminations :
3
Mount :
Through Hole
Collector Emitter Voltage (VCEO) :
500mV
Reach Compliance Code :
not_compliant
Packaging :
Bulk
Qualification Status :
Not Qualified
Operating Temperature :
-55°C~150°C TJ
Voltage - Rated DC :
-60V
ECCN Code :
EAR99
JESD-609 Code :
e0
Max Collector Current :
500mA
JESD-30 Code :
O-PBCY-T3
Gain Bandwidth Product :
50MHz
Collector Emitter Breakdown Voltage :
60V
Vce Saturation (Max) @ Ib, Ic :
500mV @ 10mA, 250mA
Terminal Position :
BOTTOM
Package / Case :
TO-226-3, TO-92-3 Long Body
Current - Collector Cutoff (Max) :
500nA
Max Power Dissipation :
1W
Pin Count :
3
Transistor Type :
PNP
Published :
2009
Transistor Element Material :
SILICON
hFE Min :
100
Current Rating :
-500mA
Datasheets
MPSW55
Introducing Transistors - Bipolar (BJT) - Single onsemi MPSW55 from Chip IC,where excellence meets affordability. This product stands out with its Base Part Number:MPSW55, Mounting Type:Through Hole, Number of Terminations:3, Operating Temperature:-55°C~150°C TJ, Package / Case:TO-226-3, TO-92-3 Long Body, MPSW55 pinout, MPSW55 datasheet PDF, MPSW55 amp .Beyond Transistors - Bipolar (BJT) - Single onsemi MPSW55 ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi MPSW55


PNP -55°C~150°C TJ 500nA 1 Elements 3 Terminations SILICON PNP TO-226-3, TO-92-3 Long Body Bulk Through Hole

MPSW55 Overview


DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 50 @ 250mA 1V DC current gain.As it features a collector emitter saturation voltage of -500mV, it allows for maximum design flexibility.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Keeping the emitter base voltage at 4V can result in a high level of efficiency.According to definition, current rating describes the maximum current a fuse can carry indefinitely without deteriorating too much, and this device has no current rating.There is a transition frequency of 50MHz in the part.When collector current reaches its maximum, it can reach 500mA volts.

MPSW55 Features


the DC current gain for this device is 50 @ 250mA 1V
a collector emitter saturation voltage of -500mV
the vce saturation(Max) is 500mV @ 10mA, 250mA
the emitter base voltage is kept at 4V
the current rating of this device is -500mA
a transition frequency of 50MHz


MPSW55 Applications


There are a lot of ON Semiconductor
MPSW55 applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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