MPSW51A
- Mfr.Part #
- MPSW51A
- Manufacturer
- onsemi
- Package / Case
- TO-226-3, TO-92-3 Long Body
- Datasheet
- Download
- Description
- TRANS PNP 40V 1A TO92
- Stock
- 24,443
- In Stock :
- 24,443
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Reach Compliance Code :
- not_compliant
- Transistor Type :
- PNP
- Current Rating :
- -1A
- Voltage - Rated DC :
- -40V
- Packaging :
- Bulk
- Power Dissipation :
- 1W
- Collector Emitter Saturation Voltage :
- -700mV
- Peak Reflow Temperature (Cel) :
- 240
- Polarity/Channel Type :
- PNP
- RoHS Status :
- Non-RoHS Compliant
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Transistor Element Material :
- SILICON
- Pin Count :
- 3
- Lead Free :
- Contains Lead
- Current - Collector (Ic) (Max) :
- 1A
- Vce Saturation (Max) @ Ib, Ic :
- 700mV @ 100mA, 1A
- ECCN Code :
- EAR99
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Collector Base Voltage (VCBO) :
- -50V
- Number of Terminations :
- 3
- Base Part Number :
- MPSW51A
- HTS Code :
- 8541.29.00.75
- Emitter Base Voltage (VEBO) :
- 5V
- Mount :
- Through Hole
- Transition Frequency :
- 50MHz
- hFE Min :
- 55
- JESD-30 Code :
- O-PBCY-T3
- Element Configuration :
- Single
- Collector Emitter Voltage (VCEO) :
- 700mV
- Terminal Finish :
- Tin/Lead (Sn/Pb)
- Qualification Status :
- Not Qualified
- Operating Temperature :
- -55°C~150°C TJ
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 60 @ 100mA 1V
- Mounting Type :
- Through Hole
- Max Collector Current :
- 1A
- Max Power Dissipation :
- 1W
- Gain Bandwidth Product :
- 50MHz
- Published :
- 2009
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Collector Emitter Breakdown Voltage :
- 40V
- Package / Case :
- TO-226-3, TO-92-3 Long Body
- Number of Elements :
- 1
- Terminal Position :
- BOTTOM
- JESD-609 Code :
- e0
- Datasheets
- MPSW51A
,TO-226_bentlead.jpg)
PNP -55°C~150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON PNP TO-226-3, TO-92-3 Long Body Bulk Through Hole
MPSW51A Overview
This device has a DC current gain of 60 @ 100mA 1V, which is the ratio between the collector current and the base current.A collector emitter saturation voltage of -700mV allows maximum design flexibility.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).The base voltage of the emitter can be kept at 5V to achieve high efficiency.Normally, a fuse's current rating refers to how much current it can carry without deteriorating too much, which in this case is -1A.In this part, there is a transition frequency of 50MHz.The maximum collector current is 1A volts.
MPSW51A Features
the DC current gain for this device is 60 @ 100mA 1V
a collector emitter saturation voltage of -700mV
the vce saturation(Max) is 700mV @ 100mA, 1A
the emitter base voltage is kept at 5V
the current rating of this device is -1A
a transition frequency of 50MHz
MPSW51A Applications
There are a lot of ON Semiconductor
MPSW51A applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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