MPSW45AG
- Mfr.Part #
- MPSW45AG
- Manufacturer
- onsemi
- Package / Case
- TO-226-3, TO-92-3 Long Body
- Datasheet
- Download
- Description
- TRANS NPN DARL 50V 1A TO92
- Stock
- 27,060
- In Stock :
- 27,060
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Power Dissipation :
- 1W
- Operating Temperature :
- -55°C~150°C TJ
- JESD-609 Code :
- e1
- Package / Case :
- TO-226-3, TO-92-3 Long Body
- Voltage - Rated DC :
- 50V
- Weight :
- 4.535924g
- Element Configuration :
- Single
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Lead Free :
- Lead Free
- Surface Mount :
- No
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 25000 @ 200mA 5V
- Frequency - Transition :
- 100MHz
- Transistor Type :
- NPN - Darlington
- Collector Base Voltage (VCBO) :
- 60V
- Terminal Position :
- BOTTOM
- Current Rating :
- 1A
- Collector Emitter Saturation Voltage :
- 1.5V
- Mounting Type :
- Through Hole
- Transistor Application :
- AMPLIFIER
- ECCN Code :
- EAR99
- Max Collector Current :
- 1A
- Length :
- 5.21mm
- Width :
- 4.19mm
- Pbfree Code :
- yes
- Max Power Dissipation :
- 1W
- Peak Reflow Temperature (Cel) :
- 260
- Lifecycle Status :
- LAST SHIPMENTS (Last Updated: 1 day ago)
- Vce Saturation (Max) @ Ib, Ic :
- 1.5V @ 2mA, 1A
- Continuous Collector Current :
- 1A
- Height :
- 7.87mm
- Emitter Base Voltage (VEBO) :
- 12V
- Transition Frequency :
- 100MHz
- Collector Emitter Voltage (VCEO) :
- 50V
- Number of Elements :
- 1
- Packaging :
- Bulk
- Number of Pins :
- 3
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Radiation Hardening :
- No
- Base Part Number :
- MPSW45A
- Transistor Element Material :
- SILICON
- REACH SVHC :
- No SVHC
- Pin Count :
- 3
- Number of Terminations :
- 3
- Published :
- 2006
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- Polarity :
- NPN
- Time@Peak Reflow Temperature-Max (s) :
- 40
- RoHS Status :
- RoHS Compliant
- Collector Emitter Breakdown Voltage :
- 50V
- Datasheets
- MPSW45AG
,TO-226_bentlead.jpg)
NPN - Darlington -55°C~150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON TO-226-3, TO-92-3 Long Body Bulk Through Hole
MPSW45AG Overview
This device has a DC current gain of 25000 @ 200mA 5V, which is the ratio between the collector current and the base current.A collector emitter saturation voltage of 1.5V allows maximum design flexibility.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).A constant collector voltage of 1A is necessary for high efficiency.The base voltage of the emitter can be kept at 12V to achieve high efficiency.Normally, a fuse's current rating refers to how much current it can carry without deteriorating too much, which in this case is 1A.In this part, there is a transition frequency of 100MHz.The maximum collector current is 1A volts.
MPSW45AG Features
the DC current gain for this device is 25000 @ 200mA 5V
a collector emitter saturation voltage of 1.5V
the vce saturation(Max) is 1.5V @ 2mA, 1A
the emitter base voltage is kept at 12V
the current rating of this device is 1A
a transition frequency of 100MHz
MPSW45AG Applications
There are a lot of ON Semiconductor
MPSW45AG applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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