MMDT5401

Manufacturer :

YANGJIE

Product Category :

Transistors - Bipolar (BJT) - Arrays

Transistor Type :

2 PNP (Dual)

Max Power Dissipation :

200mW

ECCN Code :

EAR99

Published :

2007

Package / Case :

6-TSSOP, SC-88, SOT-363

Vce Saturation (Max) @ Ib, Ic :

500mV @ 5mA, 50mA

Collector Base Voltage (VCBO) :

160V

Transistor Element Material :

SILICON

Number of Terminations :

6

JESD-609 Code :

e0

Pin Count :

6

Emitter Base Voltage (VEBO) :

-5V

Frequency :

300MHz

Height :

1mm

Transition Frequency :

100MHz

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Application :

SWITCHING

Weight :

6.010099mg

Width :

1.35mm

Max Breakdown Voltage :

150V

Operating Temperature :

-55°C~150°C TJ

Time@Peak Reflow Temperature-Max (s) :

10

Collector Emitter Voltage (VCEO) :

150V

Packaging :

Tape and Reel (TR)

Gain Bandwidth Product :

300MHz

Voltage - Rated DC :

-150V

Terminal Form :

Gull wing

Collector Emitter Breakdown Voltage :

150V

Number of Pins :

6

Reach Compliance Code :

not_compliant

Peak Reflow Temperature (Cel) :

235

Length :

2.2mm

Lead Free :

Contains Lead

Base Part Number :

MMDT5401

Current Rating :

-200mA

Continuous Collector Current :

-200mA

Element Configuration :

Dual

Current - Collector Cutoff (Max) :

50nA ICBO

Power Dissipation :

200mW

RoHS Status :

Non-RoHS Compliant

DC Current Gain (hFE) (Min) @ Ic, Vce :

60 @ 10mA 5V

Terminal Finish :

Tin/Lead (Sn85Pb15)

Mount :

Surface Mount

REACH SVHC :

No SVHC

Polarity :

PNP

Qualification Status :

Not Qualified

Number of Elements :

2

hFE Min :

60

Max Collector Current :

200mA

Mounting Type :

Surface Mount