MMDT2222V-7

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - Bipolar (BJT) - Arrays

Pin Count :

6

Number of Elements :

2

Terminal Form :

Flat

ECCN Code :

EAR99

Factory Lead Time :

19 Weeks

Max Collector Current :

600mA

Max Power Dissipation :

150mW

DC Current Gain (hFE) (Min) @ Ic, Vce :

100 @ 150mA 10V

Peak Reflow Temperature (Cel) :

260

REACH SVHC :

No SVHC

Element Configuration :

Dual

Emitter Base Voltage (VEBO) :

6V

Mounting Type :

Surface Mount

Pbfree Code :

yes

Power Dissipation :

150mW

Voltage - Rated DC :

40V

Current Rating :

600mA

Transition Frequency :

300MHz

Terminal Finish :

Matte Tin (Sn)

Frequency :

300MHz

Packaging :

Tape and Reel (TR)

Gain Bandwidth Product :

300MHz

Length :

1.6mm

Vce Saturation (Max) @ Ib, Ic :

1V @ 50mA, 500mA

Package / Case :

SOT-563, SOT-666

Collector Base Voltage (VCBO) :

75V

Current - Collector Cutoff (Max) :

10nA ICBO

Collector Emitter Voltage (VCEO) :

40V

JESD-609 Code :

e3

Polarity :

NPN

Radiation Hardening :

No

Operating Temperature :

-55°C~150°C TJ

Height :

600μm

Mount :

Surface Mount

Time@Peak Reflow Temperature-Max (s) :

40

Transistor Element Material :

SILICON

Number of Pins :

6

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Collector Emitter Breakdown Voltage :

40V

Width :

1.2mm

Base Part Number :

MMDT2222V

Weight :

3.005049mg

Transistor Type :

2 NPN (Dual)

RoHS Status :

ROHS3 Compliant

Collector Emitter Saturation Voltage :

1V

Number of Terminations :

6

hFE Min :

35

Published :

2005

Lead Free :

Lead Free

Max Breakdown Voltage :

40V