MMDT2227

Manufacturer :

Diotec Semiconductor

Product Category :

Transistors - Bipolar (BJT) - Arrays

Current - Collector Cutoff (Max) :

10nA ICBO

Polarity :

NPN, PNP

Frequency :

300MHz

Max Power Dissipation :

300mW

Max Breakdown Voltage :

60V

Terminal Finish :

Matte Tin (Sn)

Frequency - Transition :

300MHz 200MHz

Collector Base Voltage (VCBO) :

75V

Power Dissipation :

300mW

Factory Lead Time :

15 Weeks

Base Part Number :

MMDT2227M

Transistor Type :

NPN, PNP

Number of Elements :

2

Height :

1.1mm

Weight :

29.993795mg

Pin Count :

6

Voltage - Collector Emitter Breakdown (Max) :

40V 60V

Published :

2007

Gain Bandwidth Product :

300MHz

Terminal Form :

Gull wing

hFE Min :

35

Package / Case :

SOT-23-6

Number of Terminations :

6

Time@Peak Reflow Temperature-Max (s) :

40

Emitter Base Voltage (VEBO) :

6V

Operating Temperature :

-55°C~150°C TJ

Transistor Element Material :

SILICON

Max Collector Current :

600mA

Lead Free :

Lead Free

Element Configuration :

Dual

Peak Reflow Temperature (Cel) :

260

ECCN Code :

EAR99

RoHS Status :

ROHS3 Compliant

Length :

3mm

Width :

1.6mm

Pbfree Code :

yes

Transition Frequency :

300MHz

Packaging :

Tape and Reel (TR)

Collector Emitter Voltage (VCEO) :

1V

Mount :

Surface Mount

Transistor Application :

SWITCHING

Radiation Hardening :

No

DC Current Gain (hFE) (Min) @ Ic, Vce :

100 @ 150mA 10V

Mounting Type :

Surface Mount

Collector Emitter Breakdown Voltage :

60V

Vce Saturation (Max) @ Ib, Ic :

1V @ 50mA, 500mA / 1.6V @ 50mA, 500mA

Current Rating :

600mA

REACH SVHC :

No SVHC

Number of Pins :

6

JESD-609 Code :

e3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)