MMDT2227

Manufacturer :

Diotec Semiconductor

Product Category :

Transistors - Bipolar (BJT) - Arrays

Packaging :

Tape and Reel (TR)

Radiation Hardening :

No

Pin Count :

6

Operating Temperature :

-55°C~150°C TJ

Mounting Type :

Surface Mount

Time@Peak Reflow Temperature-Max (s) :

40

Published :

2007

JESD-609 Code :

e3

Number of Elements :

2

Mount :

Surface Mount

DC Current Gain (hFE) (Min) @ Ic, Vce :

100 @ 150mA 10V

Transition Frequency :

300MHz

Terminal Finish :

Matte Tin (Sn)

REACH SVHC :

No SVHC

Length :

3mm

RoHS Status :

ROHS3 Compliant

Collector Emitter Voltage (VCEO) :

1V

Max Power Dissipation :

300mW

Voltage - Collector Emitter Breakdown (Max) :

40V 60V

hFE Min :

35

Max Collector Current :

600mA

Vce Saturation (Max) @ Ib, Ic :

1V @ 50mA, 500mA / 1.6V @ 50mA, 500mA

Package / Case :

SOT-23-6

Transistor Type :

NPN, PNP

Frequency :

300MHz

Peak Reflow Temperature (Cel) :

260

Current - Collector Cutoff (Max) :

10nA ICBO

Transistor Element Material :

SILICON

Element Configuration :

Dual

Lead Free :

Lead Free

Factory Lead Time :

15 Weeks

Width :

1.6mm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Pins :

6

ECCN Code :

EAR99

Transistor Application :

SWITCHING

Current Rating :

600mA

Collector Emitter Breakdown Voltage :

60V

Polarity :

NPN, PNP

Frequency - Transition :

300MHz 200MHz

Pbfree Code :

yes

Collector Base Voltage (VCBO) :

75V

Number of Terminations :

6

Weight :

29.993795mg

Height :

1.1mm

Gain Bandwidth Product :

300MHz

Power Dissipation :

300mW

Max Breakdown Voltage :

60V

Terminal Form :

Gull wing

Emitter Base Voltage (VEBO) :

6V

Base Part Number :

MMDT2227M