MMDT2227

Manufacturer :

Diotec Semiconductor

Product Category :

Transistors - Bipolar (BJT) - Arrays

Frequency - Transition :

300MHz 200MHz

Operating Temperature :

-55°C~150°C TJ

Height :

1.1mm

DC Current Gain (hFE) (Min) @ Ic, Vce :

100 @ 150mA 10V

Number of Terminations :

6

Transistor Application :

SWITCHING

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

hFE Min :

35

Transistor Element Material :

SILICON

Factory Lead Time :

15 Weeks

Radiation Hardening :

No

Power Dissipation :

300mW

Max Breakdown Voltage :

60V

Pbfree Code :

yes

Number of Pins :

6

REACH SVHC :

No SVHC

Number of Elements :

2

Weight :

29.993795mg

JESD-609 Code :

e3

Vce Saturation (Max) @ Ib, Ic :

1V @ 50mA, 500mA / 1.6V @ 50mA, 500mA

Base Part Number :

MMDT2227M

Time@Peak Reflow Temperature-Max (s) :

40

Collector Base Voltage (VCBO) :

75V

Current Rating :

600mA

Frequency :

300MHz

Published :

2007

Element Configuration :

Dual

Polarity :

NPN, PNP

Mount :

Surface Mount

Width :

1.6mm

Package / Case :

SOT-23-6

Max Power Dissipation :

300mW

Mounting Type :

Surface Mount

Terminal Form :

Gull wing

Voltage - Collector Emitter Breakdown (Max) :

40V 60V

Transistor Type :

NPN, PNP

RoHS Status :

ROHS3 Compliant

Emitter Base Voltage (VEBO) :

6V

Lead Free :

Lead Free

Packaging :

Tape and Reel (TR)

Terminal Finish :

Matte Tin (Sn)

Collector Emitter Voltage (VCEO) :

1V

Length :

3mm

Pin Count :

6

ECCN Code :

EAR99

Max Collector Current :

600mA

Gain Bandwidth Product :

300MHz

Transition Frequency :

300MHz

Current - Collector Cutoff (Max) :

10nA ICBO

Collector Emitter Breakdown Voltage :

60V

Peak Reflow Temperature (Cel) :

260