MMDF2C03HDR2

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Arrays

Terminal Position :

Dual

Number of Elements :

2

Operating Mode :

ENHANCEMENT MODE

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Max Power Dissipation :

2W

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Turn-Off Delay Time :

81 ns

Lead Free :

Contains Lead

Vgs(th) (Max) @ Id :

3V @ 250µA

Rds On (Max) @ Id, Vgs :

70m Ω @ 3A, 10V

Current Rating :

4.1A

Drain-source On Resistance-Max :

0.07Ohm

Packaging :

Tape and Reel (TR)

Terminal Form :

Gull wing

Gate to Source Voltage (Vgs) :

20V

Peak Reflow Temperature (Cel) :

240

Drain to Source Breakdown Voltage :

30V

Transistor Element Material :

SILICON

Fall Time (Typ) :

194 ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Rise Time :

18ns

Base Part Number :

MMDF2C03HD

JESD-609 Code :

e0

Number of Terminations :

8

Configuration :

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

Reach Compliance Code :

not_compliant

Pin Count :

8

Time@Peak Reflow Temperature-Max (s) :

30

Current - Continuous Drain (Id) @ 25°C :

4.1A 3A

Mount :

Surface Mount

Avalanche Energy Rating (Eas) :

324 mJ

FET Feature :

Logic Level Gate

Power Dissipation :

2W

Mounting Type :

Surface Mount

FET Type :

N and P-Channel

Transistor Application :

SWITCHING

Continuous Drain Current (ID) :

3A

Qualification Status :

Not Qualified

Gate Charge (Qg) (Max) @ Vgs :

16nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds :

630pF @ 24V

Terminal Finish :

Tin/Lead (Sn/Pb)

Voltage - Rated DC :

30V

Polarity/Channel Type :

N-CHANNEL AND P-CHANNEL

Published :

2006

Operating Temperature :

-55°C~150°C TJ

Pulsed Drain Current-Max (IDM) :

21A

RoHS Status :

Non-RoHS Compliant

Number of Pins :

8