MMDF2C03HDR2G
- Mfr.Part #
- MMDF2C03HDR2G
- Manufacturer
- onsemi
- Package / Case
- 8-SOIC (0.154, 3.90mm Width)
- Datasheet
- Download
- Description
- MOSFET N/P-CH 30V 4.1A/3A 8SOIC
- Stock
- 6,111
- In Stock :
- 6,111
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Arrays
- Published :
- 2006
- Input Capacitance (Ciss) (Max) @ Vds :
- 630pF @ 24V
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Drain to Source Breakdown Voltage :
- 30V
- Mount :
- Surface Mount
- REACH SVHC :
- No SVHC
- Gate to Source Voltage (Vgs) :
- 20V
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- FET Type :
- N and P-Channel
- Drain-source On Resistance-Max :
- 0.07Ohm
- Terminal Form :
- Gull wing
- Qualification Status :
- Not Qualified
- Gate Charge (Qg) (Max) @ Vgs :
- 16nC @ 10V
- Operating Temperature :
- -55°C~150°C TJ
- Reach Compliance Code :
- Unknown
- Operating Mode :
- ENHANCEMENT MODE
- Rise Time :
- 18ns
- FET Feature :
- Logic Level Gate
- Lead Free :
- Lead Free
- Number of Terminations :
- 8
- Peak Reflow Temperature (Cel) :
- 260
- RoHS Status :
- RoHS Compliant
- Threshold Voltage :
- 1.7V
- Vgs(th) (Max) @ Id :
- 3V @ 250µA
- Power Dissipation :
- 2W
- ECCN Code :
- EAR99
- Package / Case :
- 8-SOIC (0.154, 3.90mm Width)
- Voltage - Rated DC :
- 30V
- Terminal Finish :
- Tin (Sn)
- Number of Elements :
- 2
- Transistor Element Material :
- SILICON
- Rds On (Max) @ Id, Vgs :
- 70m Ω @ 3A, 10V
- Current - Continuous Drain (Id) @ 25°C :
- 4.1A 3A
- Current Rating :
- 2A
- Lifecycle Status :
- OBSOLETE (Last Updated: 1 week ago)
- Number of Pins :
- 8
- Continuous Drain Current (ID) :
- 4.1A
- Max Power Dissipation :
- 2W
- Base Part Number :
- MMDF2C03HD
- Pin Count :
- 8
- Transistor Application :
- SWITCHING
- Fall Time (Typ) :
- 194 ns
- Terminal Position :
- Dual
- Polarity/Channel Type :
- N-CHANNEL AND P-CHANNEL
- Mounting Type :
- Surface Mount
- Packaging :
- Tape and Reel (TR)
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- JESD-609 Code :
- e3
- Pbfree Code :
- yes
- Turn-Off Delay Time :
- 81 ns
- Datasheets
- MMDF2C03HDR2G

MMDF2C03HDR2G datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from ON Semiconductor stock available at
MMDF2C03HDR2G Description
These tiny surface-mount MOSFETs have full logic-level performance and an extremely low RDS(on). The drain-to-source diode has a very fast reverse recovery time, and they can sustain tremendous energy in the avalanche and commutation modes. Power efficiency is a key consideration when using these devices in low voltage, high speed switching applications. Dc-dc converters and power management are typical uses in portable and battery-powered items including computers, printers, cellular and cordless phones. Additionally, they can be utilized to control low voltage motors in mass storage items like disk drives and tape drives. In designs where inductive loads are switched, the avalanche energy is defined to remove any uncertainty and provide additional protection against unforeseen voltage transients.
MMDF2C03HDR2G Features
? Longer Battery Life and Higher Efficiency with Ultra Low RDS(on)
? Logic ICs Can Drive the Logic Level Gate Drive
? Saves Board Space with Miniature SO-8 Surface Mount Package
? Bridge Circuit Use of Diodes Is Typical
? Diode Demonstrates Fast, Soft Recovery
? At Elevated Temperature, IDSS is Specified
? Specified Avalanche Energy
? Provided Mounting Instructions for SO-8 Package
? This device is lead-free.
MMDF2C03HDR2G Applications
Switching applications
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