MMBTA92LT1G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Collector Base Voltage (VCBO) :

300V

Factory Lead Time :

11 Weeks

Power Dissipation :

300mW

Radiation Hardening :

No

Polarity/Channel Type :

PNP

Number of Pins :

3

JESD-609 Code :

e3

ECCN Code :

EAR99

Transistor Type :

PNP

Max Breakdown Voltage :

300V

Element Configuration :

Single

Published :

2005

Mounting Type :

Surface Mount

Time@Peak Reflow Temperature-Max (s) :

40

Lead Free :

Lead Free

Emitter Base Voltage (VEBO) :

5V

Current - Collector Cutoff (Max) :

250nA ICBO

Contact Plating :

Tin

Max Collector Current :

500mA

Height :

940μm

RoHS Status :

ROHS3 Compliant

Number of Elements :

1

Packaging :

Tape and Reel (TR)

hFE Min :

25

Max Power Dissipation :

300mW

DC Current Gain (hFE) (Min) @ Ic, Vce :

25 @ 30mA 10V

Pin Count :

3

Base Part Number :

MMBTA92

Gain Bandwidth Product :

50MHz

Current Rating :

-500mA

Collector Emitter Voltage (VCEO) :

300V

Collector Emitter Breakdown Voltage :

-300V

Package / Case :

TO-236-3, SC-59, SOT-23-3

Width :

1.3mm

Terminal Position :

Dual

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Form :

Gull wing

Transistor Element Material :

SILICON

Lifecycle Status :

ACTIVE (Last Updated: 16 hours ago)

Frequency :

50MHz

Voltage - Rated DC :

-300V

Collector Emitter Saturation Voltage :

-500mV

Pbfree Code :

yes

Surface Mount :

yes

Length :

2.9mm

REACH SVHC :

No SVHC

Number of Terminations :

3

Operating Temperature :

-55°C~150°C TJ

Transition Frequency :

50MHz

Vce Saturation (Max) @ Ib, Ic :

500mV @ 2mA, 20mA

Peak Reflow Temperature (Cel) :

260