MMBTA64LT3G
- Mfr.Part #
- MMBTA64LT3G
- Manufacturer
- onsemi
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS PNP DARL 30V 0.5A SOT23-3
- Stock
- 80
- In Stock :
- 80
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Transistor Type :
- PNP - Darlington
- Lead Free :
- Lead Free
- Terminal Form :
- Gull wing
- Transistor Element Material :
- SILICON
- Polarity :
- PNP
- Collector Emitter Breakdown Voltage :
- 30V
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- RoHS Status :
- ROHS3 Compliant
- Max Power Dissipation :
- 225mW
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Max Collector Current :
- 500mA
- Number of Elements :
- 1
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Packaging :
- Tape and Reel (TR)
- Number of Pins :
- 3
- Transition Frequency :
- 125MHz
- JESD-609 Code :
- e3
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Emitter Base Voltage (VEBO) :
- 10V
- Lifecycle Status :
- ACTIVE (Last Updated: 1 week ago)
- Mounting Type :
- Surface Mount
- Terminal Position :
- Dual
- Pbfree Code :
- yes
- Peak Reflow Temperature (Cel) :
- 260
- Vce Saturation (Max) @ Ib, Ic :
- 1.5V @ 100µA, 100mA
- Qualification Status :
- Not Qualified
- Surface Mount :
- yes
- Factory Lead Time :
- 11 Weeks
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 20000 @ 100mA 5V
- Base Part Number :
- MMBTA64
- Collector Base Voltage (VCBO) :
- 30V
- Frequency - Transition :
- 125MHz
- Pin Count :
- 3
- Collector Emitter Saturation Voltage :
- 1.5V
- Halogen Free :
- Halogen Free
- Number of Terminations :
- 3
- Element Configuration :
- Single
- Operating Temperature :
- -55°C~150°C TJ
- Terminal Finish :
- Tin (Sn)
- Published :
- 2008
- ECCN Code :
- EAR99
- Collector Emitter Voltage (VCEO) :
- 30V
- Power Dissipation :
- 225mW
- Datasheets
- MMBTA64LT3G

PNP - Darlington -55°C~150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
MMBTA64LT3G Overview
In this device, the DC current gain is 20000 @ 100mA 5V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.A collector emitter saturation voltage of 1.5V ensures maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 1.5V @ 100μA, 100mA.Keeping the emitter base voltage at 10V allows for a high level of efficiency.125MHz is present in the transition frequency.Maximum collector currents can be below 500mA volts.
MMBTA64LT3G Features
the DC current gain for this device is 20000 @ 100mA 5V
a collector emitter saturation voltage of 1.5V
the vce saturation(Max) is 1.5V @ 100μA, 100mA
the emitter base voltage is kept at 10V
a transition frequency of 125MHz
MMBTA64LT3G Applications
There are a lot of ON Semiconductor
MMBTA64LT3G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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