MMBTA42LT3G
- Mfr.Part #
- MMBTA42LT3G
- Manufacturer
- onsemi
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS NPN 300V 0.5A SOT23-3
- Stock
- 33,056
- In Stock :
- 33,056
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Base Part Number :
- MMBTA42
- Gain Bandwidth Product :
- 50MHz
- Voltage - Rated DC :
- 300V
- Lifecycle Status :
- ACTIVE (Last Updated: 10 hours ago)
- RoHS Status :
- ROHS3 Compliant
- Pin Count :
- 3
- Current Rating :
- 500mA
- Terminal Position :
- Dual
- Collector Emitter Breakdown Voltage :
- 300V
- JESD-609 Code :
- e3
- Emitter Base Voltage (VEBO) :
- 6V
- Collector Base Voltage (VCBO) :
- 300V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Transition Frequency :
- 50MHz
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Number of Pins :
- 3
- Pbfree Code :
- yes
- Operating Temperature :
- -55°C~150°C TJ
- Frequency :
- 50MHz
- Lead Free :
- Lead Free
- Collector Emitter Saturation Voltage :
- 500mV
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Surface Mount :
- yes
- Terminal Form :
- Gull wing
- Max Collector Current :
- 500mA
- Collector Emitter Voltage (VCEO) :
- 300V
- Mounting Type :
- Surface Mount
- Published :
- 2008
- hFE Min :
- 25
- Factory Lead Time :
- 8 Weeks
- Number of Elements :
- 1
- Transistor Element Material :
- SILICON
- Max Power Dissipation :
- 225mW
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 2mA, 20mA
- Transistor Type :
- NPN
- Polarity/Channel Type :
- NPN
- Radiation Hardening :
- No
- Power Dissipation :
- 300mW
- ECCN Code :
- EAR99
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 40 @ 30mA 10V
- Number of Terminations :
- 3
- Element Configuration :
- Single
- Packaging :
- Tape and Reel (TR)
- Max Breakdown Voltage :
- 300V
- Peak Reflow Temperature (Cel) :
- 260
- Contact Plating :
- Tin
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Datasheets
- MMBTA42LT3G

NPN -55°C~150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON NPN TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
MMBTA42LT3G Overview
DC current gain in this device equals 40 @ 30mA 10V, which is the ratio of the base current to the collector current.The collector emitter saturation voltage is 500mV, giving you a wide variety of design options.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 500mV @ 2mA, 20mA.An emitter's base voltage can be kept at 6V to gain high efficiency.Current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating substantially, and this device has a 500mA current rating.As a result, the part has a transition frequency of 50MHz.Breakdown input voltage is 300V volts.In extreme cases, the collector current can be as low as 500mA volts.
MMBTA42LT3G Features
the DC current gain for this device is 40 @ 30mA 10V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 2mA, 20mA
the emitter base voltage is kept at 6V
the current rating of this device is 500mA
a transition frequency of 50MHz
MMBTA42LT3G Applications
There are a lot of ON Semiconductor
MMBTA42LT3G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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