MMBTA42LT3G

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Mfr.Part #
MMBTA42LT3G
Manufacturer
onsemi
Package / Case
TO-236-3, SC-59, SOT-23-3
Datasheet
Download
Description
TRANS NPN 300V 0.5A SOT23-3
Stock
33,056
In Stock :
33,056

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Manufacturer :
onsemi
Product Category :
Transistors - Bipolar (BJT) - Single
Base Part Number :
MMBTA42
Gain Bandwidth Product :
50MHz
Voltage - Rated DC :
300V
Lifecycle Status :
ACTIVE (Last Updated: 10 hours ago)
RoHS Status :
ROHS3 Compliant
Pin Count :
3
Current Rating :
500mA
Terminal Position :
Dual
Collector Emitter Breakdown Voltage :
300V
JESD-609 Code :
e3
Emitter Base Voltage (VEBO) :
6V
Collector Base Voltage (VCBO) :
300V
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Transition Frequency :
50MHz
Current - Collector Cutoff (Max) :
100nA ICBO
Number of Pins :
3
Pbfree Code :
yes
Operating Temperature :
-55°C~150°C TJ
Frequency :
50MHz
Lead Free :
Lead Free
Collector Emitter Saturation Voltage :
500mV
Time@Peak Reflow Temperature-Max (s) :
40
Surface Mount :
yes
Terminal Form :
Gull wing
Max Collector Current :
500mA
Collector Emitter Voltage (VCEO) :
300V
Mounting Type :
Surface Mount
Published :
2008
hFE Min :
25
Factory Lead Time :
8 Weeks
Number of Elements :
1
Transistor Element Material :
SILICON
Max Power Dissipation :
225mW
Vce Saturation (Max) @ Ib, Ic :
500mV @ 2mA, 20mA
Transistor Type :
NPN
Polarity/Channel Type :
NPN
Radiation Hardening :
No
Power Dissipation :
300mW
ECCN Code :
EAR99
DC Current Gain (hFE) (Min) @ Ic, Vce :
40 @ 30mA 10V
Number of Terminations :
3
Element Configuration :
Single
Packaging :
Tape and Reel (TR)
Max Breakdown Voltage :
300V
Peak Reflow Temperature (Cel) :
260
Contact Plating :
Tin
Package / Case :
TO-236-3, SC-59, SOT-23-3
Datasheets
MMBTA42LT3G
Introducing Transistors - Bipolar (BJT) - Single onsemi MMBTA42LT3G from Chip IC,where excellence meets affordability. This product stands out with its Base Part Number:MMBTA42, Number of Pins:3, Operating Temperature:-55°C~150°C TJ, Mounting Type:Surface Mount, Number of Terminations:3, Package / Case:TO-236-3, SC-59, SOT-23-3, MMBTA42LT3G pinout, MMBTA42LT3G datasheet PDF, MMBTA42LT3G amp .Beyond Transistors - Bipolar (BJT) - Single onsemi MMBTA42LT3G ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi MMBTA42LT3G


NPN -55°C~150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON NPN TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount

MMBTA42LT3G Overview


DC current gain in this device equals 40 @ 30mA 10V, which is the ratio of the base current to the collector current.The collector emitter saturation voltage is 500mV, giving you a wide variety of design options.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 500mV @ 2mA, 20mA.An emitter's base voltage can be kept at 6V to gain high efficiency.Current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating substantially, and this device has a 500mA current rating.As a result, the part has a transition frequency of 50MHz.Breakdown input voltage is 300V volts.In extreme cases, the collector current can be as low as 500mA volts.

MMBTA42LT3G Features


the DC current gain for this device is 40 @ 30mA 10V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 2mA, 20mA
the emitter base voltage is kept at 6V
the current rating of this device is 500mA
a transition frequency of 50MHz


MMBTA42LT3G Applications


There are a lot of ON Semiconductor
MMBTA42LT3G applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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