MMBTA05LT3G
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- Mfr.Part #
- MMBTA05LT3G
- Manufacturer
- onsemi
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS NPN 60V 0.5A SOT23-3
- Stock
- 43,797
- In Stock ：
- 43,797
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Lifecycle Status :
- ACTIVE (Last Updated: 1 day ago)
- Current - Collector Cutoff (Max) :
- 100nA
- Polarity/Channel Type :
- NPN
- Transistor Element Material :
- SILICON
- Number of Pins :
- 3
- Pbfree Code :
- yes
- Voltage - Rated DC :
- 60V
- Factory Lead Time :
- 4 Weeks
- Element Configuration :
- Single
- Transition Frequency :
- 100MHz
- Surface Mount :
- yes
- Transistor Application :
- AMPLIFIER
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Length :
- 3.04mm
- RoHS Status :
- ROHS3 Compliant
- Emitter Base Voltage (VEBO) :
- 4V
- Height :
- 1.11mm
- Collector Emitter Saturation Voltage :
- 250mV
- Terminal Form :
- Gull wing
- Current Rating :
- 500mA
- Number of Elements :
- 1
- Operating Temperature :
- -55°C~150°C TJ
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 100mA 1V
- Power Dissipation :
- 300mW
- Transistor Type :
- NPN
- Collector Emitter Breakdown Voltage :
- 60V
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Max Collector Current :
- 500mA
- Peak Reflow Temperature (Cel) :
- 260
- Terminal Finish :
- Tin (Sn)
- Published :
- 2007
- Terminal Position :
- Dual
- Vce Saturation (Max) @ Ib, Ic :
- 250mV @ 10mA, 100mA
- Max Breakdown Voltage :
- 60V
- Lead Free :
- Lead Free
- JESD-609 Code :
- e3
- hFE Min :
- 100
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Radiation Hardening :
- No
- Width :
- 2.64mm
- Pin Count :
- 3
- Max Power Dissipation :
- 225mW
- Collector Base Voltage (VCBO) :
- 60V
- Frequency :
- 100MHz
- Packaging :
- Tape and Reel (TR)
- Number of Terminations :
- 3
- Gain Bandwidth Product :
- 100MHz
- Mounting Type :
- Surface Mount
- Collector Emitter Voltage (VCEO) :
- 60V
- ECCN Code :
- EAR99
- Base Part Number :
- MMBTA05
- Datasheets
- MMBTA05LT3G
NPN -55°C~150°C TJ 100nA 1 Elements 3 Terminations SILICON NPN TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
MMBTA05LT3G Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 100 @ 100mA 1V.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of 250mV.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 250mV @ 10mA, 100mA.The emitter base voltage can be kept at 4V for high efficiency.The current rating of this fuse is 500mA, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.The part has a transition frequency of 100MHz.The breakdown input voltage is 60V volts.Single BJT transistor is possible to have a collector current as low as 500mA volts at Single BJT transistors maximum.
MMBTA05LT3G Features
the DC current gain for this device is 100 @ 100mA 1V
a collector emitter saturation voltage of 250mV
the vce saturation(Max) is 250mV @ 10mA, 100mA
the emitter base voltage is kept at 4V
the current rating of this device is 500mA
a transition frequency of 100MHz
MMBTA05LT3G Applications
There are a lot of ON Semiconductor
MMBTA05LT3G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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