MMBT6520LT3G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Number of Elements :

1

Power - Max :

225mW

Terminal Form :

Gull wing

Transistor Element Material :

SILICON

RoHS Status :

ROHS3 Compliant

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transition Frequency :

40MHz

Transistor Type :

PNP

JESD-609 Code :

e3

Vce Saturation (Max) @ Ib, Ic :

1V @ 5mA, 50mA

Peak Reflow Temperature (Cel) :

260

Transistor Application :

SWITCHING

Qualification Status :

COMMERCIAL

Mounting Type :

Surface Mount

DC Current Gain (hFE) (Min) @ Ic, Vce :

20 @ 50mA 10V

JEDEC-95 Code :

TO-236AB

Current - Collector Cutoff (Max) :

50nA ICBO

Number of Terminations :

3

Configuration :

Single

Surface Mount :

yes

Voltage - Collector Emitter Breakdown (Max) :

350V

Operating Temperature :

-55°C~150°C TJ

Packaging :

Tape and Reel (TR)

Polarity/Channel Type :

PNP

Terminal Finish :

MATTE TIN

Package / Case :

TO-236-3, SC-59, SOT-23-3

Frequency - Transition :

200MHz

Current - Collector (Ic) (Max) :

500mA

Pin Count :

3

JESD-30 Code :

R-PDSO-G3

Pbfree Code :

yes

Time@Peak Reflow Temperature-Max (s) :

40

Terminal Position :

Dual