MMBT6429LT1
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- Mfr.Part #
- MMBT6429LT1
- Manufacturer
- onsemi
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS SS NPN 45V LN SOT23
- Stock
- 10,165
- In Stock ：
- 10,165
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Pin Count :
- 3
- Power Dissipation :
- 300mW
- Vce Saturation (Max) @ Ib, Ic :
- 600mV @ 5mA, 100mA
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Packaging :
- Tape and Reel (TR)
- Surface Mount :
- yes
- Collector Base Voltage (VCBO) :
- 55V
- Number of Elements :
- 1
- Contact Plating :
- Tin
- Transition Frequency :
- 100MHz
- Lifecycle Status :
- ACTIVE (Last Updated: 4 days ago)
- Transistor Type :
- NPN
- Max Power Dissipation :
- 225mW
- Height :
- 1.01mm
- Length :
- 3.04mm
- Factory Lead Time :
- 4 Weeks
- Collector Emitter Voltage (VCEO) :
- 45V
- Mounting Type :
- Surface Mount
- Current - Collector Cutoff (Max) :
- 100nA
- Transistor Application :
- AMPLIFIER
- Radiation Hardening :
- No
- Weight :
- 4.535924g
- Collector Emitter Breakdown Voltage :
- 45V
- Base Part Number :
- MMBT6429
- Element Configuration :
- Single
- Transistor Element Material :
- SILICON
- Width :
- 1.4mm
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 500 @ 100μA 5V
- Max Collector Current :
- 200mA
- Operating Temperature :
- -55°C~150°C TJ
- Voltage - Rated DC :
- 45V
- Collector Emitter Saturation Voltage :
- 600mV
- REACH SVHC :
- No SVHC
- Terminal Position :
- Dual
- JESD-609 Code :
- e3
- Polarity/Channel Type :
- NPN
- Max Breakdown Voltage :
- 45V
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- RoHS Status :
- ROHS3 Compliant
- hFE Min :
- 500
- Gain Bandwidth Product :
- 700MHz
- Halogen Free :
- Halogen Free
- Number of Terminations :
- 3
- Frequency :
- 700MHz
- Number of Pins :
- 3
- Current Rating :
- 200mA
- Lead Free :
- Lead Free
- Terminal Form :
- Gull wing
- Pbfree Code :
- yes
- Published :
- 2004
- Emitter Base Voltage (VEBO) :
- 6V
- Peak Reflow Temperature (Cel) :
- 260
- ECCN Code :
- EAR99
- Datasheets
- MMBT6429LT1
NPN -55°C~150°C TJ 100nA 1 Elements 3 Terminations SILICON NPN TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
MMBT6429LT1G Overview
This device has a DC current gain of 500 @ 100μA 5V, which is the ratio between the base current and the collector current.This design offers maximum flexibility with a collector emitter saturation voltage of 600mV.A VCE saturation (Max) of 600mV @ 5mA, 100mA means Ic has reached its maximum value(saturated).A high level of efficiency can be achieved if the base voltage of the emitter remains at 6V.This device has a current rating of 200mA which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.As you can see, the part has a transition frequency of 100MHz.A breakdown input voltage of 45V volts can be used.A maximum collector current of 200mA volts is possible.
MMBT6429LT1G Features
the DC current gain for this device is 500 @ 100μA 5V
a collector emitter saturation voltage of 600mV
the vce saturation(Max) is 600mV @ 5mA, 100mA
the emitter base voltage is kept at 6V
the current rating of this device is 200mA
a transition frequency of 100MHz
MMBT6429LT1G Applications
There are a lot of ON Semiconductor
MMBT6429LT1G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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