MMBT6428
- Mfr.Part #
- MMBT6428
- Manufacturer
- Fairchild Semiconductor
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS NPN 50V 0.5A SOT23-3
- Stock
- 25,001
- In Stock :
- 25,001
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- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Number of Terminations :
- 3
- Transistor Application :
- AMPLIFIER
- Transistor Element Material :
- SILICON
- Height :
- 930μm
- Weight :
- 30mg
- Radiation Hardening :
- No
- ECCN Code :
- EAR99
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Number of Pins :
- 3
- Peak Reflow Temperature (Cel) :
- 260
- RoHS Status :
- RoHS Compliant
- Operating Temperature :
- -55°C~150°C TJ
- Max Collector Current :
- 500mA
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 250 @ 100μA 5V
- Voltage - Rated DC :
- 50V
- Transition Frequency :
- 100MHz
- Number of Elements :
- 1
- Lifecycle Status :
- LAST SHIPMENTS (Last Updated: 2 days ago)
- Current Rating :
- 500mA
- REACH SVHC :
- No SVHC
- Frequency :
- 700MHz
- Terminal Form :
- Gull wing
- Lead Free :
- Lead Free
- Collector Emitter Breakdown Voltage :
- 50V
- Length :
- 2.9mm
- Polarity/Channel Type :
- NPN
- Current - Collector Cutoff (Max) :
- 100nA
- Transistor Type :
- NPN
- Gain Bandwidth Product :
- 700MHz
- Vce Saturation (Max) @ Ib, Ic :
- 600mV @ 5mA, 100mA
- JESD-609 Code :
- e3
- Element Configuration :
- Single
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Max Breakdown Voltage :
- 50V
- Max Power Dissipation :
- 350mW
- Pbfree Code :
- yes
- Packaging :
- Tape and Reel (TR)
- Collector Emitter Saturation Voltage :
- 600mV
- Contact Plating :
- Tin
- Mount :
- Surface Mount
- Terminal Position :
- Dual
- Collector Base Voltage (VCBO) :
- 60V
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Published :
- 2002
- Emitter Base Voltage (VEBO) :
- 5V
- Base Part Number :
- MMBT6428
- Termination :
- SMD/SMT
- Collector Emitter Voltage (VCEO) :
- 50V
- Power Dissipation :
- 350mW
- hFE Min :
- 250
- Width :
- 1.3mm
- Mounting Type :
- Surface Mount
- Datasheets
- MMBT6428

NPN -55°C~150°C TJ 100nA 1 Elements 3 Terminations SILICON NPN TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
MMBT6428 Overview
In this device, the DC current gain is 250 @ 100μA 5V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of 600mV.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 600mV @ 5mA, 100mA.With the emitter base voltage set at 5V, an efficient operation can be achieved.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is 500mA for this device.Single BJT transistor contains a transSingle BJT transistorion frequency of 100MHz.Input voltage breakdown is available at 50V volts.Single BJT transistor is possible for the collector current to fall as low as 500mA volts at Single BJT transistors maximum.
MMBT6428 Features
the DC current gain for this device is 250 @ 100μA 5V
a collector emitter saturation voltage of 600mV
the vce saturation(Max) is 600mV @ 5mA, 100mA
the emitter base voltage is kept at 5V
the current rating of this device is 500mA
a transition frequency of 100MHz
MMBT6428 Applications
There are a lot of ON Semiconductor
MMBT6428 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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