MMBT6427

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Mfr.Part #
MMBT6427
Manufacturer
onsemi
Package / Case
TO-236-3, SC-59, SOT-23-3
Datasheet
Download
Description
TRANS NPN DARL 40V 1.2A SOT23-3
Stock
5,501
In Stock :
5,501

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Manufacturer :
onsemi
Product Category :
Transistors - Bipolar (BJT) - Single
Mount :
Surface Mount
Current - Collector (Ic) (Max) :
1.2A
Max Power Dissipation :
350mW
Height :
930μm
Min Operating Temperature :
-55°C
Published :
2016
Power - Max :
350mW
Power Dissipation :
350mW
REACH SVHC :
No SVHC
Voltage - Rated DC :
40V
hFE Min :
20000
Collector Base Voltage (VCBO) :
40V
Base Part Number :
MMBT6427
Supplier Device Package :
SOT-23-3 (TO-236)
Element Configuration :
Single
Max Collector Current :
1.2A
Voltage - Collector Emitter Breakdown (Max) :
40V
Max Operating Temperature :
150°C
Number of Pins :
3
Contact Plating :
Tin
Radiation Hardening :
No
Operating Temperature :
-55°C~150°C TJ
Weight :
30mg
Lifecycle Status :
LAST SHIPMENTS (Last Updated: 23 hours ago)
Lead Free :
Lead Free
RoHS Status :
RoHS Compliant
Max Breakdown Voltage :
40V
Number of Elements :
1
Polarity :
NPN
Emitter Base Voltage (VEBO) :
12V
Collector Emitter Breakdown Voltage :
40V
Collector Emitter Voltage (VCEO) :
40V
Current - Collector Cutoff (Max) :
1μA
Package / Case :
TO-236-3, SC-59, SOT-23-3
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Transistor Type :
NPN - Darlington
Mounting Type :
Surface Mount
Width :
1.3mm
Current Rating :
1.2A
DC Current Gain (hFE) (Min) @ Ic, Vce :
14000 @ 500mA 5V
Collector Emitter Saturation Voltage :
1.2V
Factory Lead Time :
39 Weeks
Length :
2.92mm
Packaging :
Tape and Reel (TR)
Vce Saturation (Max) @ Ib, Ic :
1.5V @ 500μA, 500mA
Datasheets
MMBT6427
Introducing Transistors - Bipolar (BJT) - Single onsemi MMBT6427 from Chip IC,where excellence meets affordability. This product stands out with its Base Part Number:MMBT6427, Number of Pins:3, Operating Temperature:-55°C~150°C TJ, Package / Case:TO-236-3, SC-59, SOT-23-3, Mounting Type:Surface Mount, MMBT6427 pinout, MMBT6427 datasheet PDF, MMBT6427 amp .Beyond Transistors - Bipolar (BJT) - Single onsemi MMBT6427 ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi MMBT6427


NPN - Darlington -55°C~150°C TJ 1μA 1 Elements TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount

MMBT6427 Overview


The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 14000 @ 500mA 5V.With a collector emitter saturation voltage of 1.2V, it offers maximum design flexibility.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 1.5V @ 500μA, 500mA.If the emitter base voltage is kept at 12V, a high level of efficiency can be achieved.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is 1.2A.There is a breakdown input voltage of 40V volts that it can take.The product comes in the supplier device package of SOT-23-3 (TO-236).A 40V maximal voltage - Collector Emitter Breakdown is present in the device.Collector current can be as low as 1.2A volts at its maximum.

MMBT6427 Features


the DC current gain for this device is 14000 @ 500mA 5V
a collector emitter saturation voltage of 1.2V
the vce saturation(Max) is 1.5V @ 500μA, 500mA
the emitter base voltage is kept at 12V
the current rating of this device is 1.2A
the supplier device package of SOT-23-3 (TO-236)


MMBT6427 Applications


There are a lot of ON Semiconductor
MMBT6427 applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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