MMBT5550-TP
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- Mfr.Part #
- MMBT5550-TP
- Manufacturer
- Micro Commercial Components (MCC)
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS NPN 140V 0.6A SOT23
- Stock
- 1,171
- In Stock ：
- 1,171
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- Manufacturer :
- Micro Commercial Components (MCC)
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Power - Max :
- 225mW
- RoHS Status :
- ROHS3 Compliant
- Terminal Position :
- Dual
- Number of Elements :
- 1
- Transistor Type :
- NPN
- Transistor Element Material :
- SILICON
- Configuration :
- Single
- Surface Mount :
- yes
- Mounting Type :
- Surface Mount
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 60 @ 10mA 5V
- Number of Terminations :
- 3
- JESD-30 Code :
- R-PDSO-G3
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Terminal Form :
- Gull wing
- Current - Collector (Ic) (Max) :
- 600mA
- Operating Temperature :
- -55°C~150°C
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Voltage - Collector Emitter Breakdown (Max) :
- 140V
- Vce Saturation (Max) @ Ib, Ic :
- 250mV @ 5mA, 50mA
- Polarity/Channel Type :
- NPN
- Packaging :
- Cut Tape (CT)
- Factory Lead Time :
- 8 Weeks
- ECCN Code :
- EAR99
- Datasheets
- MMBT5550-TP
NPN -55°C~150°C 100nA ICBO 1 Elements 3 Terminations SILICON NPN TO-236-3, SC-59, SOT-23-3 Cut Tape (CT) Surface Mount
MMBT5550-TP Overview
DC current gain in this device equals 60 @ 10mA 5V, which is the ratio of the base current to the collector current.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 250mV @ 5mA, 50mA.A negative maximal voltage - Collector Emitter Breakdown can be observed in the device.
MMBT5550-TP Features
the DC current gain for this device is 60 @ 10mA 5V
the vce saturation(Max) is 250mV @ 5mA, 50mA
MMBT5550-TP Applications
There are a lot of Micro Commercial Co
MMBT5550-TP applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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