MMBT5401LT1G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Radiation Hardening :

No

Factory Lead Time :

4 Weeks

Packaging :

Tape and Reel (TR)

Length :

2.9mm

Max Power Dissipation :

300mW

Base Part Number :

MMBT5401

Time@Peak Reflow Temperature-Max (s) :

40

Polarity/Channel Type :

PNP

Package / Case :

TO-236-3, SC-59, SOT-23-3

Current - Collector Cutoff (Max) :

50nA ICBO

Transistor Application :

SWITCHING

Max Collector Current :

500mA

Pin Count :

3

Element Configuration :

Single

Contact Plating :

Tin

Lead Free :

Lead Free

Frequency :

300MHz

Lifecycle Status :

ACTIVE (Last Updated: 3 days ago)

Emitter Base Voltage (VEBO) :

5V

Surface Mount :

yes

Weight :

4.535924g

Vce Saturation (Max) @ Ib, Ic :

500mV @ 5mA, 50mA

Operating Temperature :

-55°C~150°C TJ

Transistor Type :

PNP

REACH SVHC :

No SVHC

Peak Reflow Temperature (Cel) :

260

Width :

1.3mm

Transistor Element Material :

SILICON

Number of Pins :

3

Mounting Type :

Surface Mount

Gain Bandwidth Product :

300MHz

Pbfree Code :

yes

Number of Terminations :

3

Power Dissipation :

300mW

Transition Frequency :

100MHz

JESD-609 Code :

e3

hFE Min :

50

DC Current Gain (hFE) (Min) @ Ic, Vce :

60 @ 10mA 5V

Collector Emitter Breakdown Voltage :

-150V

Number of Elements :

1

Height :

940μm

RoHS Status :

ROHS3 Compliant

Terminal Position :

Dual

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Form :

Gull wing

Published :

2005

Collector Emitter Voltage (VCEO) :

150V

Collector Base Voltage (VCBO) :

160V

Voltage - Rated DC :

-150V

ECCN Code :

EAR99

Collector Emitter Saturation Voltage :

-500mV

Max Breakdown Voltage :

150V

Current Rating :

-500mA