MMBT5210
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- Mfr.Part #
- MMBT5210
- Manufacturer
- onsemi
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS NPN 50V 0.1A SOT23-3
- Stock
- 2,023
- In Stock ：
- 2,023
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Polarity/Channel Type :
- NPN
- Current Rating :
- 500mA
- hFE Min :
- 200
- Transistor Application :
- AMPLIFIER
- REACH SVHC :
- No SVHC
- Published :
- 2002
- Collector Base Voltage (VCBO) :
- 50V
- Length :
- 2.9mm
- Gain Bandwidth Product :
- 30MHz
- Mount :
- Surface Mount
- Factory Lead Time :
- 7 Weeks
- Terminal Finish :
- Tin (Sn)
- ECCN Code :
- EAR99
- Number of Pins :
- 3
- Terminal Form :
- Gull wing
- Lifecycle Status :
- LAST SHIPMENTS (Last Updated: 1 week ago)
- Current - Collector Cutoff (Max) :
- 50nA ICBO
- Number of Terminations :
- 3
- Transistor Element Material :
- SILICON
- Pbfree Code :
- yes
- Operating Temperature :
- -55°C~150°C TJ
- Packaging :
- Tape and Reel (TR)
- Max Collector Current :
- 100mA
- JESD-609 Code :
- e3
- Voltage - Rated DC :
- 50V
- Base Part Number :
- MMBT5210
- Transistor Type :
- NPN
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 200 @ 100μA 5V
- Terminal Position :
- Dual
- Element Configuration :
- Single
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Radiation Hardening :
- No
- Collector Emitter Voltage (VCEO) :
- 50V
- RoHS Status :
- RoHS Compliant
- Mounting Type :
- Surface Mount
- Collector Emitter Breakdown Voltage :
- 50V
- Max Power Dissipation :
- 350mW
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Height :
- 930μm
- Power Dissipation :
- 350mW
- Number of Elements :
- 1
- Max Breakdown Voltage :
- 50V
- Frequency :
- 30MHz
- Width :
- 1.3mm
- Transition Frequency :
- 30MHz
- Emitter Base Voltage (VEBO) :
- 4.5V
- Lead Free :
- Lead Free
- Weight :
- 30mg
- Collector Emitter Saturation Voltage :
- 700mV
- Vce Saturation (Max) @ Ib, Ic :
- 700mV @ 1mA, 10mA
- Datasheets
- MMBT5210
NPN -55°C~150°C TJ 50nA ICBO 1 Elements 3 Terminations SILICON NPN TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
MMBT5210 Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 200 @ 100μA 5V.The collector emitter saturation voltage is 700mV, which allows for maximum design flexibility.When VCE saturation is 700mV @ 1mA, 10mA, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of 4.5V can achieve high levels of efficiency.Fuse current ratings refer to how much current the fuse can carry for an indefinite period without deteriorating too much, and this device has a current rating of 500mA.In the part, the transition frequency is 30MHz.This device can take an input voltage of 50V volts before it breaks down.A maximum collector current of 100mA volts can be achieved.
MMBT5210 Features
the DC current gain for this device is 200 @ 100μA 5V
a collector emitter saturation voltage of 700mV
the vce saturation(Max) is 700mV @ 1mA, 10mA
the emitter base voltage is kept at 4.5V
the current rating of this device is 500mA
a transition frequency of 30MHz
MMBT5210 Applications
There are a lot of ON Semiconductor
MMBT5210 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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