MMBT5089LT1G
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- Mfr.Part #
- MMBT5089LT1G
- Manufacturer
- onsemi
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS NPN 25V 0.05A SOT23-3
- Stock
- 1,023
- In Stock ：
- 1,023
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Polarity/Channel Type :
- NPN
- Emitter Base Voltage (VEBO) :
- 4.5V
- Lead Free :
- Lead Free
- Pin Count :
- 3
- Peak Reflow Temperature (Cel) :
- 260
- Number of Pins :
- 3
- ECCN Code :
- EAR99
- Collector Base Voltage (VCBO) :
- 30V
- Gain Bandwidth Product :
- 50MHz
- Max Power Dissipation :
- 225mW
- Power - Max :
- 300mW
- Power Dissipation :
- 225mW
- hFE Min :
- 400
- Current - Collector Cutoff (Max) :
- 50nA ICBO
- Operating Temperature :
- -55°C~150°C TJ
- JESD-609 Code :
- e3
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Transistor Element Material :
- SILICON
- Collector Emitter Saturation Voltage :
- 500mV
- Element Configuration :
- Single
- Terminal Position :
- Dual
- Radiation Hardening :
- No
- Base Part Number :
- MMBT5089
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 1mA, 10mA
- Max Breakdown Voltage :
- 25V
- Published :
- 1997
- Mounting Type :
- Surface Mount
- Terminal Form :
- Gull wing
- Number of Elements :
- 1
- Frequency :
- 50MHz
- Max Collector Current :
- 50mA
- Transistor Type :
- NPN
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Weight :
- 4.535924g
- Length :
- 3.04mm
- Surface Mount :
- yes
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 400 @ 100μA 5V
- Current Rating :
- 50mA
- REACH SVHC :
- No SVHC
- Collector Emitter Breakdown Voltage :
- 25V
- Transition Frequency :
- 50MHz
- Width :
- 2.64mm
- Packaging :
- Tape and Reel (TR)
- Pbfree Code :
- yes
- Lifecycle Status :
- ACTIVE (Last Updated: 2 days ago)
- Number of Terminations :
- 3
- Contact Plating :
- Tin
- Voltage - Rated DC :
- 25V
- Height :
- 1.11mm
- Collector Emitter Voltage (VCEO) :
- 25V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- RoHS Status :
- ROHS3 Compliant
- Factory Lead Time :
- 9 Weeks
- Datasheets
- MMBT5089LT1G
NPN -55°C~150°C TJ 50nA ICBO 1 Elements 3 Terminations SILICON NPN TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
MMBT5089LT1G Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 400 @ 100μA 5V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 500mV, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 500mV @ 1mA, 10mA.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 4.5V.Its current rating is 50mA, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.Parts of this part have transition frequencies of 50MHz.Single BJT transistor can take a breakdown input voltage of 25V volts.During maximum operation, collector current can be as low as 50mA volts.
MMBT5089LT1G Features
the DC current gain for this device is 400 @ 100μA 5V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 1mA, 10mA
the emitter base voltage is kept at 4.5V
the current rating of this device is 50mA
a transition frequency of 50MHz
MMBT5089LT1G Applications
There are a lot of ON Semiconductor
MMBT5089LT1G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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