MMBT5089LT1

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Mfr.Part #
MMBT5089LT1
Manufacturer
onsemi
Package / Case
TO-236-3, SC-59, SOT-23-3
Datasheet
Download
Description
TRANS NPN 25V 50MA SOT23
Stock
12,775
In Stock :
12,775

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Manufacturer :
onsemi
Product Category :
Transistors - Bipolar (BJT) - Single
hFE Min :
400
Transition Frequency :
50MHz
Collector Base Voltage (VCBO) :
30V
Factory Lead Time :
9 Weeks
Published :
1997
Emitter Base Voltage (VEBO) :
4.5V
Frequency :
50MHz
Contact Plating :
Tin
DC Current Gain (hFE) (Min) @ Ic, Vce :
400 @ 100μA 5V
Mounting Type :
Surface Mount
Package / Case :
TO-236-3, SC-59, SOT-23-3
Terminal Position :
Dual
Power Dissipation :
225mW
Base Part Number :
MMBT5089
Pin Count :
3
REACH SVHC :
No SVHC
JESD-609 Code :
e3
Collector Emitter Voltage (VCEO) :
25V
Weight :
4.535924g
Transistor Element Material :
SILICON
Gain Bandwidth Product :
50MHz
Time@Peak Reflow Temperature-Max (s) :
40
Transistor Type :
NPN
Vce Saturation (Max) @ Ib, Ic :
500mV @ 1mA, 10mA
Terminal Form :
Gull wing
Surface Mount :
yes
Operating Temperature :
-55°C~150°C TJ
Max Power Dissipation :
225mW
Max Collector Current :
50mA
Max Breakdown Voltage :
25V
ECCN Code :
EAR99
Current - Collector Cutoff (Max) :
50nA ICBO
RoHS Status :
ROHS3 Compliant
Number of Pins :
3
Lifecycle Status :
ACTIVE (Last Updated: 2 days ago)
Element Configuration :
Single
Voltage - Rated DC :
25V
Length :
3.04mm
Polarity/Channel Type :
NPN
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Width :
2.64mm
Packaging :
Tape and Reel (TR)
Height :
1.11mm
Peak Reflow Temperature (Cel) :
260
Power - Max :
300mW
Pbfree Code :
yes
Collector Emitter Breakdown Voltage :
25V
Current Rating :
50mA
Number of Terminations :
3
Collector Emitter Saturation Voltage :
500mV
Radiation Hardening :
No
Number of Elements :
1
Lead Free :
Lead Free
Datasheets
MMBT5089LT1
Introducing Transistors - Bipolar (BJT) - Single onsemi MMBT5089LT1 from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Surface Mount, Package / Case:TO-236-3, SC-59, SOT-23-3, Base Part Number:MMBT5089, Operating Temperature:-55°C~150°C TJ, Number of Pins:3, Number of Terminations:3, MMBT5089LT1 pinout, MMBT5089LT1 datasheet PDF, MMBT5089LT1 amp .Beyond Transistors - Bipolar (BJT) - Single onsemi MMBT5089LT1 ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi MMBT5089LT1


NPN -55°C~150°C TJ 50nA ICBO 1 Elements 3 Terminations SILICON NPN TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount

MMBT5089LT1G Overview


As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 400 @ 100μA 5V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 500mV, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 500mV @ 1mA, 10mA.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 4.5V.Its current rating is 50mA, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.Parts of this part have transition frequencies of 50MHz.Single BJT transistor can take a breakdown input voltage of 25V volts.During maximum operation, collector current can be as low as 50mA volts.

MMBT5089LT1G Features


the DC current gain for this device is 400 @ 100μA 5V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 1mA, 10mA
the emitter base voltage is kept at 4.5V
the current rating of this device is 50mA
a transition frequency of 50MHz


MMBT5089LT1G Applications


There are a lot of ON Semiconductor
MMBT5089LT1G applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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