MMBT5088LT1
- Mfr.Part #
- MMBT5088LT1
- Manufacturer
- onsemi
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS NPN 30V 50MA SOT23
- Stock
- 3,153
- In Stock :
- 3,153
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Frequency :
- 50MHz
- Published :
- 2005
- Factory Lead Time :
- 4 Weeks
- Emitter Base Voltage (VEBO) :
- 4.5V
- Collector Base Voltage (VCBO) :
- 35V
- Collector Emitter Saturation Voltage :
- 500mV
- Lead Free :
- Lead Free
- Number of Pins :
- 3
- Transistor Element Material :
- SILICON
- Gain Bandwidth Product :
- 50MHz
- Transistor Type :
- NPN
- Max Breakdown Voltage :
- 30V
- hFE Min :
- 300
- Current - Collector Cutoff (Max) :
- 50nA ICBO
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Number of Terminations :
- 3
- Terminal Position :
- Dual
- Collector Emitter Breakdown Voltage :
- 30V
- Current Rating :
- 50mA
- Pbfree Code :
- yes
- Max Collector Current :
- 50mA
- Time@Peak Reflow Temperature-Max (s) :
- 40
- JESD-609 Code :
- e3
- Collector Emitter Voltage (VCEO) :
- 30V
- REACH SVHC :
- No SVHC
- Transition Frequency :
- 50MHz
- Element Configuration :
- Single
- Packaging :
- Tape and Reel (TR)
- Peak Reflow Temperature (Cel) :
- 260
- Terminal Form :
- Gull wing
- Power Dissipation :
- 300mW
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 1mA, 10mA
- Max Power Dissipation :
- 300mW
- RoHS Status :
- ROHS3 Compliant
- Number of Elements :
- 1
- Contact Plating :
- Tin
- Voltage - Rated DC :
- 30V
- ECCN Code :
- EAR99
- Weight :
- 4.535924g
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Surface Mount :
- yes
- Base Part Number :
- MMBT5088
- Radiation Hardening :
- No
- Width :
- 1.4mm
- Polarity/Channel Type :
- NPN
- Lifecycle Status :
- ACTIVE (Last Updated: 2 days ago)
- Operating Temperature :
- -55°C~150°C TJ
- Length :
- 3.04mm
- Height :
- 1.01mm
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 300 @ 100μA 5V
- Mounting Type :
- Surface Mount
- Pin Count :
- 3
- Datasheets
- MMBT5088LT1

NPN -55°C~150°C TJ 50nA ICBO 1 Elements 3 Terminations SILICON NPN TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
MMBT5088LT1G Overview
This device has a DC current gain of 300 @ 100μA 5V, which is the ratio between the base current and the collector current.This design offers maximum flexibility with a collector emitter saturation voltage of 500mV.A VCE saturation (Max) of 500mV @ 1mA, 10mA means Ic has reached its maximum value(saturated).A high level of efficiency can be achieved if the base voltage of the emitter remains at 4.5V.This device has a current rating of 50mA which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.As you can see, the part has a transition frequency of 50MHz.A breakdown input voltage of 30V volts can be used.A maximum collector current of 50mA volts is possible.
MMBT5088LT1G Features
the DC current gain for this device is 300 @ 100μA 5V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 1mA, 10mA
the emitter base voltage is kept at 4.5V
the current rating of this device is 50mA
a transition frequency of 50MHz
MMBT5088LT1G Applications
There are a lot of ON Semiconductor
MMBT5088LT1G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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