MMBT4356

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

hFE Min :

50

Transistor Application :

AMPLIFIER

RoHS Status :

RoHS Compliant

Package / Case :

TO-236-3, SC-59, SOT-23-3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Vce Saturation (Max) @ Ib, Ic :

500mV @ 50mA, 500mA

Max Collector Current :

800mA

Operating Temperature :

-55°C~150°C TJ

Mount :

Surface Mount

Transistor Type :

PNP

Number of Terminations :

3

Number of Elements :

1

Power Dissipation :

350mW

Collector Emitter Saturation Voltage :

-500mV

Turn Off Time-Max (toff) :

400ns

Mounting Type :

Surface Mount

Number of Pins :

3

Transistor Element Material :

SILICON

Packaging :

Tape and Reel (TR)

Collector Emitter Breakdown Voltage :

80V

Published :

2002

Current Rating :

-800mA

Collector Base Voltage (VCBO) :

-80V

Weight :

30mg

Voltage - Rated DC :

-80V

Lead Free :

Lead Free

Emitter Base Voltage (VEBO) :

-5V

Polarity/Channel Type :

PNP

Max Power Dissipation :

350mW

Current - Collector Cutoff (Max) :

50nA

Collector Emitter Voltage (VCEO) :

500mV

DC Current Gain (hFE) (Min) @ Ic, Vce :

50 @ 10mA 10V

Terminal Position :

Dual

Element Configuration :

Single

Terminal Form :

Gull wing