MMBT2222ATT3G
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- Mfr.Part #
- MMBT2222ATT3G
- Manufacturer
- onsemi
- Package / Case
- SC-75, SOT-416
- Datasheet
- Download
- Description
- TRANS NPN 40V 0.6A SC75 SOT416
- Stock
- 13,273
- In Stock ：
- 13,273
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Gain Bandwidth Product :
- 300MHz
- Terminal Form :
- Gull wing
- Pin Count :
- 3
- Package / Case :
- SC-75, SOT-416
- Collector Emitter Voltage (VCEO) :
- 40V
- hFE Min :
- 35
- Base Part Number :
- MMBT2222A
- Packaging :
- Tape and Reel (TR)
- Mounting Type :
- Surface Mount
- Number of Terminations :
- 3
- Power Dissipation :
- 150mW
- Max Power Dissipation :
- 150mW
- Surface Mount :
- yes
- Terminal Position :
- Dual
- Pbfree Code :
- yes
- Peak Reflow Temperature (Cel) :
- 260
- Polarity/Channel Type :
- NPN
- ECCN Code :
- EAR99
- Turn Off Time-Max (toff) :
- 285ns
- Radiation Hardening :
- No
- Published :
- 2005
- Operating Temperature :
- -55°C~150°C TJ
- Terminal Finish :
- Tin (Sn)
- Vce Saturation (Max) @ Ib, Ic :
- 1V @ 50mA, 500mA
- JESD-609 Code :
- e3
- Number of Pins :
- 3
- Collector Emitter Breakdown Voltage :
- 40V
- Collector Emitter Saturation Voltage :
- 1V
- Element Configuration :
- Single
- Transistor Application :
- AMPLIFIER
- Number of Elements :
- 1
- Transistor Type :
- NPN
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 150mA 10V
- Max Collector Current :
- 600mA
- Current - Collector Cutoff (Max) :
- 10nA ICBO
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Transistor Element Material :
- SILICON
- Lifecycle Status :
- ACTIVE (Last Updated: 1 week ago)
- Lead Free :
- Lead Free
- Frequency :
- 300MHz
- Collector Base Voltage (VCBO) :
- 75V
- Factory Lead Time :
- 8 Weeks
- Emitter Base Voltage (VEBO) :
- 6V
- Transition Frequency :
- 300MHz
- RoHS Status :
- ROHS3 Compliant
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Datasheets
- MMBT2222ATT3G
NPN -55°C~150°C TJ 10nA ICBO 1 Elements 3 Terminations SILICON NPN SC-75, SOT-416 Tape & Reel (TR) Surface Mount
MMBT2222ATT3G Overview
In this device, the DC current gain is 100 @ 150mA 10V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of 1V.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 1V @ 50mA, 500mA.With the emitter base voltage set at 6V, an efficient operation can be achieved.Single BJT transistor contains a transSingle BJT transistorion frequency of 300MHz.Single BJT transistor is possible for the collector current to fall as low as 600mA volts at Single BJT transistors maximum.
MMBT2222ATT3G Features
the DC current gain for this device is 100 @ 150mA 10V
a collector emitter saturation voltage of 1V
the vce saturation(Max) is 1V @ 50mA, 500mA
the emitter base voltage is kept at 6V
a transition frequency of 300MHz
MMBT2222ATT3G Applications
There are a lot of ON Semiconductor
MMBT2222ATT3G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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