MJ802
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- Mfr.Part #
- MJ802
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-204AA, TO-3
- Datasheet
- Download
- Description
- TRANS NPN 90V 30A TO3
- Stock
- 32,894
- In Stock ：
- 32,894
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Transistor Element Material :
- SILICON
- Mounting Type :
- Through Hole
- Number of Pins :
- 2
- Terminal Form :
- PIN/PEG
- Terminal Finish :
- Tin (Sn)
- Transistor Application :
- AMPLIFIER
- Current Rating :
- 30A
- Width :
- 26.67mm
- hFE Min :
- 25
- Factory Lead Time :
- 2 Weeks
- Collector Emitter Voltage (VCEO) :
- 90V
- Weight :
- 4.535924g
- Max Power Dissipation :
- 200W
- Polarity/Channel Type :
- NPN
- Surface Mount :
- No
- Number of Terminations :
- 2
- Element Configuration :
- Single
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Operating Temperature :
- -65°C~200°C TJ
- Radiation Hardening :
- No
- Current - Collector Cutoff (Max) :
- 1mA ICBO
- Emitter Base Voltage (VEBO) :
- 4V
- Frequency :
- 2MHz
- REACH SVHC :
- No SVHC
- Gain Bandwidth Product :
- 2MHz
- JESD-609 Code :
- e3
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 25 @ 7.5A 2V
- ECCN Code :
- EAR99
- Peak Reflow Temperature (Cel) :
- 260
- Pbfree Code :
- yes
- Power Dissipation :
- 200W
- Pin Count :
- 2
- RoHS Status :
- ROHS3 Compliant
- Transition Frequency :
- 2MHz
- Voltage - Rated DC :
- 90V
- Height :
- 8.51mm
- Collector Emitter Saturation Voltage :
- 800mV
- Collector Emitter Breakdown Voltage :
- 90V
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Collector Base Voltage (VCBO) :
- 100V
- Case Connection :
- COLLECTOR
- Lead Free :
- Lead Free
- Terminal Position :
- BOTTOM
- Length :
- 39.37mm
- Transistor Type :
- NPN
- Published :
- 2000
- Max Collector Current :
- 30A
- Lifecycle Status :
- ACTIVE (Last Updated: 1 day ago)
- Base Part Number :
- MJ802
- Packaging :
- Tray
- Package / Case :
- TO-204AA, TO-3
- Number of Elements :
- 1
- Vce Saturation (Max) @ Ib, Ic :
- 800mV @ 750mA, 7.5A
- Datasheets
- MJ802
NPN -65°C~200°C TJ 1mA ICBO 1 Elements 2 Terminations SILICON NPN TO-204AA, TO-3 Tray Through Hole
MJ802G Overview
In this device, the DC current gain is 25 @ 7.5A 2V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of 800mV.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 800mV @ 750mA, 7.5A.With the emitter base voltage set at 4V, an efficient operation can be achieved.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is 30A for this device.Single BJT transistor contains a transSingle BJT transistorion frequency of 2MHz.Single BJT transistor is possible for the collector current to fall as low as 30A volts at Single BJT transistors maximum.
MJ802G Features
the DC current gain for this device is 25 @ 7.5A 2V
a collector emitter saturation voltage of 800mV
the vce saturation(Max) is 800mV @ 750mA, 7.5A
the emitter base voltage is kept at 4V
the current rating of this device is 30A
a transition frequency of 2MHz
MJ802G Applications
There are a lot of ON Semiconductor
MJ802G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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