MJ802G
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- Mfr.Part #
- MJ802G
- Manufacturer
- onsemi
- Package / Case
- TO-204AA, TO-3
- Datasheet
- Download
- Description
- TRANS NPN 90V 30A TO204
- Stock
- 12
- In Stock ：
- 12
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Collector Emitter Voltage (VCEO) :
- 90V
- Number of Terminations :
- 2
- RoHS Status :
- ROHS3 Compliant
- Peak Reflow Temperature (Cel) :
- 260
- Number of Pins :
- 2
- JESD-609 Code :
- e3
- Package / Case :
- TO-204AA, TO-3
- Weight :
- 4.535924g
- Vce Saturation (Max) @ Ib, Ic :
- 800mV @ 750mA, 7.5A
- Terminal Finish :
- Tin (Sn)
- Radiation Hardening :
- No
- Pbfree Code :
- yes
- Width :
- 26.67mm
- Base Part Number :
- MJ802
- Current Rating :
- 30A
- Length :
- 39.37mm
- Published :
- 2000
- Case Connection :
- COLLECTOR
- Gain Bandwidth Product :
- 2MHz
- Transistor Type :
- NPN
- Transition Frequency :
- 2MHz
- Lead Free :
- Lead Free
- Mounting Type :
- Through Hole
- Frequency :
- 2MHz
- Voltage - Rated DC :
- 90V
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Terminal Position :
- BOTTOM
- Operating Temperature :
- -65°C~200°C TJ
- Surface Mount :
- No
- Power Dissipation :
- 200W
- Collector Emitter Saturation Voltage :
- 800mV
- Factory Lead Time :
- 2 Weeks
- Terminal Form :
- PIN/PEG
- Pin Count :
- 2
- Max Collector Current :
- 30A
- Collector Base Voltage (VCBO) :
- 100V
- Polarity/Channel Type :
- NPN
- hFE Min :
- 25
- ECCN Code :
- EAR99
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Current - Collector Cutoff (Max) :
- 1mA ICBO
- Number of Elements :
- 1
- Emitter Base Voltage (VEBO) :
- 4V
- Transistor Application :
- AMPLIFIER
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 25 @ 7.5A 2V
- Lifecycle Status :
- ACTIVE (Last Updated: 1 day ago)
- Max Power Dissipation :
- 200W
- Packaging :
- Tray
- Height :
- 8.51mm
- Transistor Element Material :
- SILICON
- Collector Emitter Breakdown Voltage :
- 90V
- Element Configuration :
- Single
- REACH SVHC :
- No SVHC
- Datasheets
- MJ802G
NPN -65°C~200°C TJ 1mA ICBO 1 Elements 2 Terminations SILICON NPN TO-204AA, TO-3 Tray Through Hole
MJ802G Overview
In this device, the DC current gain is 25 @ 7.5A 2V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of 800mV.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 800mV @ 750mA, 7.5A.With the emitter base voltage set at 4V, an efficient operation can be achieved.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is 30A for this device.Single BJT transistor contains a transSingle BJT transistorion frequency of 2MHz.Single BJT transistor is possible for the collector current to fall as low as 30A volts at Single BJT transistors maximum.
MJ802G Features
the DC current gain for this device is 25 @ 7.5A 2V
a collector emitter saturation voltage of 800mV
the vce saturation(Max) is 800mV @ 750mA, 7.5A
the emitter base voltage is kept at 4V
the current rating of this device is 30A
a transition frequency of 2MHz
MJ802G Applications
There are a lot of ON Semiconductor
MJ802G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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