MJ802
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- Mfr.Part #
- MJ802
- Manufacturer
- NTE Electronics, Inc.
- Package / Case
- TO-204AA, TO-3
- Datasheet
- Download
- Description
- TRANS NPN 90V 30A TO204
- Stock
- 26
- In Stock ：
- 26
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- Manufacturer :
- NTE Electronics, Inc.
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Collector Emitter Breakdown Voltage :
- 90V
- Transistor Type :
- NPN
- Frequency :
- 2MHz
- Weight :
- 4.535924g
- Terminal Position :
- BOTTOM
- Operating Temperature :
- -65°C~200°C TJ
- Gain Bandwidth Product :
- 2MHz
- Power Dissipation :
- 200W
- Width :
- 26.67mm
- Vce Saturation (Max) @ Ib, Ic :
- 800mV @ 750mA, 7.5A
- hFE Min :
- 25
- Element Configuration :
- Single
- Package / Case :
- TO-204AA, TO-3
- Peak Reflow Temperature (Cel) :
- 260
- JESD-609 Code :
- e3
- REACH SVHC :
- No SVHC
- Max Collector Current :
- 30A
- Mounting Type :
- Through Hole
- Collector Emitter Voltage (VCEO) :
- 90V
- Pbfree Code :
- yes
- Transition Frequency :
- 2MHz
- RoHS Status :
- ROHS3 Compliant
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 25 @ 7.5A 2V
- Published :
- 2000
- Collector Base Voltage (VCBO) :
- 100V
- Current Rating :
- 30A
- Transistor Element Material :
- SILICON
- Radiation Hardening :
- No
- Lifecycle Status :
- ACTIVE (Last Updated: 1 day ago)
- Max Power Dissipation :
- 200W
- Packaging :
- Tray
- Terminal Finish :
- Tin (Sn)
- Collector Emitter Saturation Voltage :
- 800mV
- Height :
- 8.51mm
- Polarity/Channel Type :
- NPN
- Current - Collector Cutoff (Max) :
- 1mA ICBO
- Number of Terminations :
- 2
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Transistor Application :
- AMPLIFIER
- Emitter Base Voltage (VEBO) :
- 4V
- Number of Pins :
- 2
- Length :
- 39.37mm
- Number of Elements :
- 1
- Lead Free :
- Lead Free
- Voltage - Rated DC :
- 90V
- Base Part Number :
- MJ802
- Pin Count :
- 2
- Surface Mount :
- No
- Factory Lead Time :
- 2 Weeks
- Case Connection :
- COLLECTOR
- ECCN Code :
- EAR99
- Terminal Form :
- PIN/PEG
- Datasheets
- MJ802
NPN -65°C~200°C TJ 1mA ICBO 1 Elements 2 Terminations SILICON NPN TO-204AA, TO-3 Tray Through Hole
MJ802G Overview
In this device, the DC current gain is 25 @ 7.5A 2V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of 800mV.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 800mV @ 750mA, 7.5A.With the emitter base voltage set at 4V, an efficient operation can be achieved.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is 30A for this device.Single BJT transistor contains a transSingle BJT transistorion frequency of 2MHz.Single BJT transistor is possible for the collector current to fall as low as 30A volts at Single BJT transistors maximum.
MJ802G Features
the DC current gain for this device is 25 @ 7.5A 2V
a collector emitter saturation voltage of 800mV
the vce saturation(Max) is 800mV @ 750mA, 7.5A
the emitter base voltage is kept at 4V
the current rating of this device is 30A
a transition frequency of 2MHz
MJ802G Applications
There are a lot of ON Semiconductor
MJ802G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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