MJ802
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- Mfr.Part #
- MJ802
- Manufacturer
- onsemi
- Package / Case
- TO-204AA, TO-3
- Datasheet
- Download
- Description
- TRANS PWR NPN 90V 30A TO3
- Stock
- 35,050
- In Stock ：
- 35,050
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Collector Emitter Breakdown Voltage :
- 90V
- Transistor Element Material :
- SILICON
- Terminal Finish :
- Tin (Sn)
- Length :
- 39.37mm
- Emitter Base Voltage (VEBO) :
- 4V
- Element Configuration :
- Single
- Peak Reflow Temperature (Cel) :
- 260
- JESD-609 Code :
- e3
- Gain Bandwidth Product :
- 2MHz
- Current Rating :
- 30A
- Terminal Position :
- BOTTOM
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- ECCN Code :
- EAR99
- Pin Count :
- 2
- Number of Terminations :
- 2
- Width :
- 26.67mm
- Polarity/Channel Type :
- NPN
- Number of Pins :
- 2
- Package / Case :
- TO-204AA, TO-3
- Transistor Type :
- NPN
- Current - Collector Cutoff (Max) :
- 1mA ICBO
- Max Power Dissipation :
- 200W
- Surface Mount :
- No
- RoHS Status :
- ROHS3 Compliant
- Published :
- 2000
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 25 @ 7.5A 2V
- Frequency :
- 2MHz
- hFE Min :
- 25
- Packaging :
- Tray
- Collector Emitter Voltage (VCEO) :
- 90V
- Base Part Number :
- MJ802
- Collector Emitter Saturation Voltage :
- 800mV
- Transistor Application :
- AMPLIFIER
- Mounting Type :
- Through Hole
- Number of Elements :
- 1
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Collector Base Voltage (VCBO) :
- 100V
- REACH SVHC :
- No SVHC
- Pbfree Code :
- yes
- Power Dissipation :
- 200W
- Case Connection :
- COLLECTOR
- Weight :
- 4.535924g
- Lead Free :
- Lead Free
- Terminal Form :
- PIN/PEG
- Operating Temperature :
- -65°C~200°C TJ
- Radiation Hardening :
- No
- Lifecycle Status :
- ACTIVE (Last Updated: 1 day ago)
- Transition Frequency :
- 2MHz
- Max Collector Current :
- 30A
- Factory Lead Time :
- 2 Weeks
- Voltage - Rated DC :
- 90V
- Height :
- 8.51mm
- Vce Saturation (Max) @ Ib, Ic :
- 800mV @ 750mA, 7.5A
- Datasheets
- MJ802
NPN -65°C~200°C TJ 1mA ICBO 1 Elements 2 Terminations SILICON NPN TO-204AA, TO-3 Tray Through Hole
MJ802G Overview
In this device, the DC current gain is 25 @ 7.5A 2V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of 800mV.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 800mV @ 750mA, 7.5A.With the emitter base voltage set at 4V, an efficient operation can be achieved.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is 30A for this device.Single BJT transistor contains a transSingle BJT transistorion frequency of 2MHz.Single BJT transistor is possible for the collector current to fall as low as 30A volts at Single BJT transistors maximum.
MJ802G Features
the DC current gain for this device is 25 @ 7.5A 2V
a collector emitter saturation voltage of 800mV
the vce saturation(Max) is 800mV @ 750mA, 7.5A
the emitter base voltage is kept at 4V
the current rating of this device is 30A
a transition frequency of 2MHz
MJ802G Applications
There are a lot of ON Semiconductor
MJ802G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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