MJ11030G
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- Mfr.Part #
- MJ11030G
- Manufacturer
- onsemi
- Package / Case
- TO-204AE
- Datasheet
- Download
- Description
- TRANS NPN DARL 90V 50A TO204
- Stock
- 9,420
- In Stock ：
- 9,420
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Collector Emitter Saturation Voltage :
- 2.5V
- Max Power Dissipation :
- 300W
- Pbfree Code :
- yes
- Collector Emitter Breakdown Voltage :
- 90V
- Package / Case :
- TO-204AE
- Transistor Element Material :
- SILICON
- Qualification Status :
- Not Qualified
- Number of Terminations :
- 2
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 1000 @ 25A 5V
- Lifecycle Status :
- LAST SHIPMENTS (Last Updated: 2 weeks ago)
- Current Rating :
- 50A
- Polarity :
- NPN
- Vce Saturation (Max) @ Ib, Ic :
- 3.5V @ 500mA, 50A
- Operating Temperature :
- -55°C~200°C TJ
- Case Connection :
- COLLECTOR
- JESD-609 Code :
- e1
- Surface Mount :
- No
- Terminal Form :
- PIN/PEG
- Transistor Application :
- AMPLIFIER
- Published :
- 2008
- Terminal Position :
- BOTTOM
- Current - Collector Cutoff (Max) :
- 2mA
- Element Configuration :
- Single
- Lead Free :
- Lead Free
- Voltage - Rated DC :
- 90V
- Peak Reflow Temperature (Cel) :
- 260
- Number of Pins :
- 2
- Collector Emitter Voltage (VCEO) :
- 90V
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- RoHS Status :
- RoHS Compliant
- Packaging :
- Tray
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Collector Base Voltage (VCBO) :
- 90V
- ECCN Code :
- EAR99
- Emitter Base Voltage (VEBO) :
- 5V
- Transistor Type :
- NPN - Darlington
- Pin Count :
- 2
- Max Collector Current :
- 50A
- Mounting Type :
- Through Hole
- Number of Elements :
- 1
- Datasheets
- MJ11030G
NPN - Darlington -55°C~200°C TJ 2mA 1 Elements 2 Terminations SILICON TO-204AE Tray Through Hole
MJ11030G Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 1000 @ 25A 5V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 2.5V, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 3.5V @ 500mA, 50A.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 5V.Its current rating is 50A, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.During maximum operation, collector current can be as low as 50A volts.
MJ11030G Features
the DC current gain for this device is 1000 @ 25A 5V
a collector emitter saturation voltage of 2.5V
the vce saturation(Max) is 3.5V @ 500mA, 50A
the emitter base voltage is kept at 5V
the current rating of this device is 50A
MJ11030G Applications
There are a lot of ON Semiconductor
MJ11030G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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