MJ11028G

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Mfr.Part #
MJ11028G
Manufacturer
onsemi
Package / Case
TO-204AE
Datasheet
Download
Description
TRANS NPN DARL 60V 50A TO204
Stock
9,512
In Stock :
9,512

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Manufacturer :
onsemi
Product Category :
Transistors - Bipolar (BJT) - Single
Transistor Type :
NPN - Darlington
Current - Collector Cutoff (Max) :
2mA
Radiation Hardening :
No
Operating Temperature :
-55°C~200°C TJ
Number of Terminations :
2
Peak Reflow Temperature (Cel) :
260
Emitter Base Voltage (VEBO) :
5V
DC Current Gain (hFE) (Min) @ Ic, Vce :
1000 @ 25A 5V
Max Collector Current :
50A
ECCN Code :
EAR99
Factory Lead Time :
2 Weeks
Terminal Form :
PIN/PEG
Continuous Collector Current :
50A
Terminal Position :
BOTTOM
Collector Emitter Breakdown Voltage :
60V
Transistor Application :
AMPLIFIER
Current Rating :
50A
Published :
2002
Time@Peak Reflow Temperature-Max (s) :
40
Packaging :
Tray
Element Configuration :
Single
Polarity :
NPN
REACH SVHC :
No SVHC
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Collector Emitter Saturation Voltage :
2.5V
RoHS Status :
ROHS3 Compliant
Collector Emitter Voltage (VCEO) :
60V
Terminal Finish :
Tin/Silver/Copper (Sn/Ag/Cu)
Pbfree Code :
yes
Lifecycle Status :
ACTIVE (Last Updated: 4 days ago)
Vce Saturation (Max) @ Ib, Ic :
3.5V @ 500mA, 50A
Collector Base Voltage (VCBO) :
60V
Case Connection :
COLLECTOR
Number of Pins :
2
Number of Elements :
1
Pin Count :
2
Package / Case :
TO-204AE
JESD-609 Code :
e1
Max Power Dissipation :
300W
Voltage - Rated DC :
50V
Mounting Type :
Through Hole
Lead Free :
Lead Free
Transistor Element Material :
SILICON
Surface Mount :
No
Power Dissipation :
300mW
Datasheets
MJ11028G
Introducing Transistors - Bipolar (BJT) - Single onsemi MJ11028G from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:-55°C~200°C TJ, Number of Terminations:2, Number of Pins:2, Package / Case:TO-204AE, Mounting Type:Through Hole, MJ11028G pinout, MJ11028G datasheet PDF, MJ11028G amp .Beyond Transistors - Bipolar (BJT) - Single onsemi MJ11028G ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi MJ11028G


NPN - Darlington -55°C~200°C TJ 2mA 1 Elements 2 Terminations SILICON TO-204AE Tray Through Hole

MJ11028G Overview


In this device, the DC current gain is 1000 @ 25A 5V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of 2.5V.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 3.5V @ 500mA, 50A.A 50A continuous collector voltage is necessary to achieve high efficiency.With the emitter base voltage set at 5V, an efficient operation can be achieved.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is 50A for this device.Single BJT transistor is possible for the collector current to fall as low as 50A volts at Single BJT transistors maximum.

MJ11028G Features


the DC current gain for this device is 1000 @ 25A 5V
a collector emitter saturation voltage of 2.5V
the vce saturation(Max) is 3.5V @ 500mA, 50A
the emitter base voltage is kept at 5V
the current rating of this device is 50A


MJ11028G Applications


There are a lot of ON Semiconductor
MJ11028G applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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