MJ11022G
- Mfr.Part #
- MJ11022G
- Manufacturer
- onsemi
- Package / Case
- TO-204AA, TO-3
- Datasheet
- Download
- Description
- TRANS NPN DARL 250V 15A TO204
- Stock
- 8,245
- In Stock :
- 8,245
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Height :
- 8.51mm
- Pbfree Code :
- yes
- Collector Emitter Voltage (VCEO) :
- 250V
- ECCN Code :
- EAR99
- Radiation Hardening :
- No
- Polarity :
- NPN
- Number of Elements :
- 1
- Current Rating :
- 15A
- Published :
- 2005
- Number of Pins :
- 2
- Max Collector Current :
- 15A
- Transistor Type :
- NPN - Darlington
- hFE Min :
- 100
- Transistor Element Material :
- SILICON
- Current - Collector Cutoff (Max) :
- 1mA
- Packaging :
- Tray
- RoHS Status :
- ROHS3 Compliant
- Number of Terminations :
- 2
- Lead Free :
- Lead Free
- Transistor Application :
- SWITCHING
- Case Connection :
- COLLECTOR
- Max Power Dissipation :
- 175W
- Factory Lead Time :
- 2 Weeks
- Collector Base Voltage (VCBO) :
- 250V
- Terminal Finish :
- Tin (Sn)
- Package / Case :
- TO-204AA, TO-3
- Vce Saturation (Max) @ Ib, Ic :
- 3.4V @ 150mA, 15A
- Power Dissipation :
- 150W
- Voltage - Rated DC :
- 250V
- Mounting Type :
- Through Hole
- Peak Reflow Temperature (Cel) :
- 260
- Terminal Form :
- PIN/PEG
- Length :
- 39.37mm
- Element Configuration :
- Single
- REACH SVHC :
- No SVHC
- Surface Mount :
- No
- Lifecycle Status :
- ACTIVE (Last Updated: 6 days ago)
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Operating Temperature :
- -65°C~200°C TJ
- Transition Frequency :
- 3MHz
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 400 @ 10A 5V
- Collector Emitter Breakdown Voltage :
- 250V
- Pin Count :
- 2
- JESD-609 Code :
- e3
- Width :
- 26.67mm
- Emitter Base Voltage (VEBO) :
- 50V
- Weight :
- 4.535924g
- Terminal Position :
- BOTTOM
- Collector Emitter Saturation Voltage :
- 2V
- Datasheets
- MJ11022G

NPN - Darlington -65°C~200°C TJ 1mA 1 Elements 2 Terminations SILICON TO-204AA, TO-3 Tray Through Hole
MJ11022G Overview
This device has a DC current gain of 400 @ 10A 5V, which is the ratio between the collector current and the base current.A collector emitter saturation voltage of 2V allows maximum design flexibility.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).The base voltage of the emitter can be kept at 50V to achieve high efficiency.Normally, a fuse's current rating refers to how much current it can carry without deteriorating too much, which in this case is 15A.In this part, there is a transition frequency of 3MHz.The maximum collector current is 15A volts.
MJ11022G Features
the DC current gain for this device is 400 @ 10A 5V
a collector emitter saturation voltage of 2V
the vce saturation(Max) is 3.4V @ 150mA, 15A
the emitter base voltage is kept at 50V
the current rating of this device is 15A
a transition frequency of 3MHz
MJ11022G Applications
There are a lot of ON Semiconductor
MJ11022G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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