MDS60L

Manufacturer :

Microsemi

Product Category :

Transistors - Bipolar (BJT) - RF

Published :

2015

Frequency - Transition :

1.03GHz~1.09GHz

Terminal Form :

Flat

Power Dissipation :

120W

Package / Case :

55AW

Max Power Dissipation :

120W

Factory Lead Time :

13 Weeks

Number of Pins :

3

Number of Terminations :

2

Transistor Type :

NPN

Packaging :

Bulk

Collector Emitter Breakdown Voltage :

65V

Transistor Element Material :

SILICON

Operating Temperature :

200°C TJ

RoHS Status :

RoHS Compliant

Polarity/Channel Type :

NPN

Configuration :

Single

Emitter Base Voltage (VEBO) :

3.5V

Terminal Position :

Dual

Highest Frequency Band :

L B

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Pin Count :

2

Max Collector Current :

4A

Terminal Finish :

TIN LEAD

ECCN Code :

EAR99

Number of Elements :

1

JESD-30 Code :

R-CDFM-F2

Mounting Type :

Chassis Mount

Case Connection :

Base

DC Current Gain (hFE) (Min) @ Ic, Vce :

20 @ 500mA 5V

Gain :

10dB

Mount :

Chassis Mount, Screw

Radiation Hardening :

No

Collector Base Voltage (VCBO) :

65V

Collector Emitter Voltage (VCEO) :

65V

JESD-609 Code :

e0