MBR20080CT

Manufacturer :

GeneSiC Semiconductor

Product Category :

Diodes - Rectifiers - Arrays

Factory Lead Time :

6 Weeks

Terminal Form :

UNSPECIFIED

Number of Phases :

1

Max Reverse Leakage Current :

1μA

Application :

Power

RoHS Status :

RoHS Compliant

Mounting Type :

Chassis Mount

Diode Type :

Schottky

Package / Case :

Twin Tower

Average Rectified Current :

200A

Mount :

Chassis Mount

ECCN Code :

EAR99

JESD-30 Code :

R-PUFM-X2

Voltage - Forward (Vf) (Max) @ If :

840mV @ 100A

Diode Configuration :

1 Pair Common Anode

Current - Average Rectified (Io) :

200A DC

Speed :

Fast Recovery =< 500ns, > 200mA (Io)

Number of Terminations :

2

Diode Element Material :

SILICON

Element Configuration :

Common Anode

HTS Code :

8541.10.00.80

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Min Operating Temperature :

-40°C

Output Current-Max :

100A

Pbfree Code :

yes

Max Repetitive Reverse Voltage (Vrrm) :

80V

Peak Reverse Current :

1A

Max Operating Temperature :

175°C

Terminal Position :

UPPER

Number of Elements :

2

Max Reverse Voltage (DC) :

80V

Published :

2013

Packaging :

Bulk

Forward Current :

200A

Max Surge Current :

1.5kA

Lifecycle Status :

PRODUCTION (Last Updated: 6 months ago)

Current - Reverse Leakage @ Vr :

5mA @ 20V