MBR20040CTR

Manufacturer :

GeneSiC Semiconductor

Product Category :

Diodes - Rectifiers - Arrays

Factory Lead Time :

6 Weeks

Max Reverse Leakage Current :

1μA

Package / Case :

Twin Tower

Max Reverse Voltage (DC) :

40V

Mounting Type :

Chassis Mount

Number of Phases :

1

Diode Element Material :

SILICON

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Terminations :

2

Application :

Power

Published :

2010

Output Current-Max :

100A

Max Surge Current :

1.5kA

Diode Configuration :

1 Pair Common Anode

Forward Current :

200A

Terminal Form :

UNSPECIFIED

Packaging :

Bulk

Terminal Position :

UPPER

ECCN Code :

EAR99

Min Operating Temperature :

-40°C

Max Repetitive Reverse Voltage (Vrrm) :

40V

Voltage - Forward (Vf) (Max) @ If :

650mV @ 100A

Peak Reverse Current :

1A

Current - Average Rectified (Io) :

200A DC

JESD-30 Code :

R-PUFM-X2

Lifecycle Status :

PRODUCTION (Last Updated: 6 months ago)

Number of Elements :

2

HTS Code :

8541.10.00.80

Element Configuration :

Common Anode

Current - Reverse Leakage @ Vr :

5mA @ 20V

Pbfree Code :

yes

Diode Type :

Schottky

Speed :

Fast Recovery =< 500ns, > 200mA (Io)

RoHS Status :

RoHS Compliant

Mount :

Chassis Mount

Average Rectified Current :

200A

Max Operating Temperature :

175°C