MBR200200CT

Manufacturer :

GeneSiC Semiconductor

Product Category :

Diodes - Rectifiers - Arrays

Speed :

Fast Recovery =< 500ns, > 200mA (Io)

Diode Type :

Schottky

Number of Phases :

1

Current - Reverse Leakage @ Vr :

3mA @ 200V

Packaging :

Bulk

Operating Temperature - Junction :

-55°C~150°C

Number of Terminations :

2

JESD-30 Code :

R-PUFM-X2

Lifecycle Status :

Production (Last Updated: 5 months ago)

Diode Configuration :

1 Pair Common Cathode

HTS Code :

8541.10.00.80

Package / Case :

Twin Tower

Max Reverse Voltage (DC) :

200V

Mount :

Chassis Mount

Pbfree Code :

yes

Terminal Form :

UNSPECIFIED

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Voltage - Forward (Vf) (Max) @ If :

920mV @ 100A

Application :

Power

ECCN Code :

EAR99

Element Configuration :

Common Cathode

Terminal Position :

UPPER

Non-rep Pk Forward Current-Max :

1500A

Operating Temperature (Max) :

150°C

Mounting Type :

Chassis Mount

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Number of Elements :

2

Diode Element Material :

SILICON

Reverse Current-Max :

3000μA

Factory Lead Time :

6 Weeks

Average Rectified Current :

100A

RoHS Status :

RoHS Compliant

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED