MBR200200CT

Manufacturer :

GeneSiC Semiconductor

Product Category :

Diodes - Rectifiers - Arrays

Operating Temperature (Max) :

150°C

Average Rectified Current :

100A

Number of Terminations :

2

Terminal Position :

UPPER

Package / Case :

Twin Tower

Operating Temperature - Junction :

-55°C~150°C

Voltage - Forward (Vf) (Max) @ If :

920mV @ 100A

Element Configuration :

Common Cathode

Mount :

Chassis Mount

Pbfree Code :

yes

Diode Configuration :

1 Pair Common Cathode

Number of Elements :

2

Packaging :

Bulk

Speed :

Fast Recovery =< 500ns, > 200mA (Io)

Application :

Power

Diode Element Material :

SILICON

JESD-30 Code :

R-PUFM-X2

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Factory Lead Time :

6 Weeks

Max Reverse Voltage (DC) :

200V

Lifecycle Status :

Production (Last Updated: 5 months ago)

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Current - Reverse Leakage @ Vr :

3mA @ 200V

RoHS Status :

RoHS Compliant

ECCN Code :

EAR99

Number of Phases :

1

Terminal Form :

UNSPECIFIED

Mounting Type :

Chassis Mount

HTS Code :

8541.10.00.80

Diode Type :

Schottky

Reverse Current-Max :

3000μA

Non-rep Pk Forward Current-Max :

1500A