MBR20035CTR

Manufacturer :

GeneSiC Semiconductor

Product Category :

Diodes - Rectifiers - Arrays

Max Operating Temperature :

175°C

Max Reverse Leakage Current :

1μA

Terminal Position :

UPPER

RoHS Status :

RoHS Compliant

Forward Current :

200A

Lifecycle Status :

Production (Last Updated: 5 months ago)

Published :

2010

Package / Case :

Twin Tower

HTS Code :

8541.10.00.80

Diode Element Material :

SILICON

Number of Terminations :

2

Terminal Form :

UNSPECIFIED

Max Surge Current :

1.5kA

Mounting Type :

Chassis Mount

Element Configuration :

Common Anode

Max Repetitive Reverse Voltage (Vrrm) :

35V

Peak Reverse Current :

1A

Factory Lead Time :

6 Weeks

Pbfree Code :

yes

JESD-30 Code :

R-PUFM-X2

Number of Elements :

2

Diode Type :

Schottky

Current - Average Rectified (Io) :

200A DC

Application :

Power

Output Current-Max :

100A

Speed :

Fast Recovery =< 500ns, > 200mA (Io)

Mount :

Chassis Mount

Voltage - Forward (Vf) (Max) @ If :

650mV @ 100A

Current - Reverse Leakage @ Vr :

5mA @ 20V

Packaging :

Bulk

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

ECCN Code :

EAR99

Max Reverse Voltage (DC) :

35V

Diode Configuration :

1 Pair Common Anode

Min Operating Temperature :

-40°C

Number of Phases :

1

Average Rectified Current :

200A