MBR20035CTR

Manufacturer :

GeneSiC Semiconductor

Product Category :

Diodes - Rectifiers - Arrays

Number of Terminations :

2

Current - Average Rectified (Io) :

200A DC

Diode Element Material :

SILICON

Packaging :

Bulk

Package / Case :

Twin Tower

Current - Reverse Leakage @ Vr :

5mA @ 20V

Max Reverse Voltage (DC) :

35V

Number of Phases :

1

Max Surge Current :

1.5kA

Terminal Form :

UNSPECIFIED

Max Repetitive Reverse Voltage (Vrrm) :

35V

Lifecycle Status :

Production (Last Updated: 5 months ago)

ECCN Code :

EAR99

RoHS Status :

RoHS Compliant

Forward Current :

200A

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

JESD-30 Code :

R-PUFM-X2

Element Configuration :

Common Anode

HTS Code :

8541.10.00.80

Max Operating Temperature :

175°C

Factory Lead Time :

6 Weeks

Mount :

Chassis Mount

Application :

Power

Published :

2010

Min Operating Temperature :

-40°C

Mounting Type :

Chassis Mount

Max Reverse Leakage Current :

1μA

Peak Reverse Current :

1A

Speed :

Fast Recovery =< 500ns, > 200mA (Io)

Number of Elements :

2

Output Current-Max :

100A

Diode Type :

Schottky

Voltage - Forward (Vf) (Max) @ If :

650mV @ 100A

Average Rectified Current :

200A

Pbfree Code :

yes

Terminal Position :

UPPER

Diode Configuration :

1 Pair Common Anode