MBR200100CTR

Manufacturer :

GeneSiC Semiconductor

Product Category :

Diodes - Rectifiers - Arrays

Package / Case :

Twin Tower

ECCN Code :

EAR99

Packaging :

Bulk

Mounting Type :

Chassis Mount

Diode Element Material :

SILICON

HTS Code :

8541.10.00.80

Orientation :

Straight

Current - Reverse Leakage @ Vr :

5mA @ 20V

Max Operating Temperature :

175°C

Max Repetitive Reverse Voltage (Vrrm) :

100V

Terminal Position :

UPPER

Diode Configuration :

1 Pair Common Anode

Termination :

Solder

Peak Reverse Current :

1A

Speed :

Fast Recovery =< 500ns, > 200mA (Io)

Number of Contacts :

6

Published :

2013

Application :

Power

Current - Average Rectified (Io) :

200A DC

Element Configuration :

Common Anode

Max Surge Current :

1.5kA

Number of Terminations :

2

Min Operating Temperature :

-40°C

Diode Type :

Schottky

Pitch :

4.2mm

Output Current-Max :

100A

Pbfree Code :

yes

Mount :

Chassis Mount, Through Hole

Max Voltage Rating (DC) :

600.6kV

Average Rectified Current :

200A

Forward Current :

200A

Number of Elements :

2

Number of Phases :

1

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

JESD-30 Code :

R-PUFM-X2

RoHS Status :

RoHS Compliant

Max Reverse Voltage (DC) :

100V

Lifecycle Status :

PRODUCTION (Last Updated: 6 months ago)

Max Reverse Leakage Current :

1μA

Voltage - Forward (Vf) (Max) @ If :

840mV @ 100A

Factory Lead Time :

6 Weeks

Terminal Form :

UNSPECIFIED