MBR200100CTR

Manufacturer :

GeneSiC Semiconductor

Product Category :

Diodes - Rectifiers - Arrays

Termination :

Solder

Speed :

Fast Recovery =< 500ns, > 200mA (Io)

Orientation :

Straight

Diode Configuration :

1 Pair Common Anode

Max Surge Current :

1.5kA

Max Operating Temperature :

175°C

Diode Element Material :

SILICON

Current - Average Rectified (Io) :

200A DC

Number of Elements :

2

Number of Phases :

1

Output Current-Max :

100A

Max Repetitive Reverse Voltage (Vrrm) :

100V

Number of Terminations :

2

Factory Lead Time :

6 Weeks

Application :

Power

Peak Reverse Current :

1A

ECCN Code :

EAR99

Mounting Type :

Chassis Mount

Packaging :

Bulk

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Diode Type :

Schottky

Min Operating Temperature :

-40°C

Terminal Form :

UNSPECIFIED

Max Voltage Rating (DC) :

600.6kV

Terminal Position :

UPPER

Lifecycle Status :

PRODUCTION (Last Updated: 6 months ago)

Mount :

Chassis Mount, Through Hole

Published :

2013

Pitch :

4.2mm

Max Reverse Leakage Current :

1μA

RoHS Status :

RoHS Compliant

JESD-30 Code :

R-PUFM-X2

Max Reverse Voltage (DC) :

100V

Pbfree Code :

yes

Package / Case :

Twin Tower

Element Configuration :

Common Anode

HTS Code :

8541.10.00.80

Current - Reverse Leakage @ Vr :

5mA @ 20V

Number of Contacts :

6

Forward Current :

200A

Average Rectified Current :

200A

Voltage - Forward (Vf) (Max) @ If :

840mV @ 100A