MBR20030CTR

Manufacturer :

GeneSiC Semiconductor

Product Category :

Diodes - Rectifiers - Arrays

Mounting Type :

Chassis Mount

Diode Element Material :

SILICON

Current - Average Rectified (Io) :

200A DC

Max Reverse Voltage (DC) :

30V

Current - Reverse Leakage @ Vr :

5mA @ 20V

Number of Phases :

1

Application :

Power

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Peak Reverse Current :

1A

Operating Temperature - Junction :

-55°C~150°C

Max Operating Temperature :

175°C

Forward Current :

200A

Max Repetitive Reverse Voltage (Vrrm) :

30V

Lifecycle Status :

Production (Last Updated: 5 months ago)

Voltage - Forward (Vf) (Max) @ If :

650mV @ 100A

Diode Type :

Schottky

Factory Lead Time :

6 Weeks

Min Operating Temperature :

-40°C

Number of Elements :

2

Package / Case :

Twin Tower

Average Rectified Current :

200A

JESD-30 Code :

R-PUFM-X2

Packaging :

Bulk

Max Reverse Leakage Current :

1μA

Speed :

Fast Recovery =< 500ns, > 200mA (Io)

Diode Configuration :

1 Pair Common Anode

Output Current-Max :

100A

RoHS Status :

RoHS Compliant

Terminal Position :

UPPER

Max Surge Current :

1.5kA

Terminal Form :

UNSPECIFIED

Mount :

Chassis Mount

ECCN Code :

EAR99

Number of Terminations :

2

HTS Code :

8541.10.00.80

Pbfree Code :

yes

Published :

2010