JAN2N930
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- Mfr.Part #
- JAN2N930
- Manufacturer
- Microchip Technology
- Package / Case
- TO-206AA, TO-18-3 Metal Can
- Datasheet
- Download
- Description
- TRANS NPN 45V 0.03A TO18
- Stock
- 34,141
- In Stock ：
- 34,141
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Mount :
- Through Hole
- Max Power Dissipation :
- 300mW
- Factory Lead Time :
- 23 Weeks
- Power Dissipation :
- 300mW
- Radiation Hardening :
- No
- Number of Elements :
- 1
- Number of Terminations :
- 3
- Series :
- Military, MIL-PRF-19500/253
- Current - Collector Cutoff (Max) :
- 2nA
- RoHS Status :
- Non-RoHS Compliant
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 10μA 5V
- Pbfree Code :
- No
- Transistor Element Material :
- SILICON
- Vce Saturation (Max) @ Ib, Ic :
- 1V @ 500μA, 10mA
- Collector Emitter Voltage (VCEO) :
- 45V
- JESD-609 Code :
- e0
- Contact Plating :
- Lead, Tin
- Emitter Base Voltage (VEBO) :
- 6V
- Mounting Type :
- Through Hole
- Configuration :
- Single
- Number of Pins :
- 3
- Packaging :
- Bulk
- Collector Base Voltage (VCBO) :
- 60V
- Terminal Position :
- BOTTOM
- Polarity/Channel Type :
- NPN
- Collector Emitter Breakdown Voltage :
- 45V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Terminal Form :
- Wire
- ECCN Code :
- EAR99
- Qualification Status :
- Qualified
- Operating Temperature :
- -55°C~200°C TJ
- Max Collector Current :
- 30mA
- Terminal Finish :
- Tin/Lead (Sn/Pb)
- Transistor Type :
- NPN
- Case Connection :
- COLLECTOR
- Pin Count :
- 3
- Lifecycle Status :
- IN PRODUCTION (Last Updated: 3 weeks ago)
- Package / Case :
- TO-206AA, TO-18-3 Metal Can
- Datasheets
- JAN2N930
NPN -55°C~200°C TJ 2nA 1 Elements 3 Terminations SILICON NPN TO-206AA, TO-18-3 Metal Can Bulk Through Hole
JAN2N930 Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 100 @ 10μA 5V.When VCE saturation is 1V @ 500μA, 10mA, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of 6V can achieve high levels of efficiency.A maximum collector current of 30mA volts can be achieved.
JAN2N930 Features
the DC current gain for this device is 100 @ 10μA 5V
the vce saturation(Max) is 1V @ 500μA, 10mA
the emitter base voltage is kept at 6V
JAN2N930 Applications
There are a lot of Microsemi Corporation
JAN2N930 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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Most of our products are shipped via FEDEX,DHL,UPS and SF EXPRESS...
Shipping CostShipping Cost starts at $40, but some countries will exceed $40. For example (South Africa, Brazil, India, Pakistan, Israel, etc.).If customer have shipping account, we can make shipment under customer’s shipping account with freight collect directly.
The basic freight (for package ≤0.5 KG ) depends on the time zones and countries
Once the goods are shipped, estimated delivery time depends on the shipping methods you chose. You can track it by the tracking no.
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