JAN2N918UB
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- Mfr.Part #
- JAN2N918UB
- Manufacturer
- Microchip Technology
- Package / Case
- 3-SMD, Non-Standard
- Datasheet
- Download
- Description
- TRANS NPN 15V 0.05A TO72
- Stock
- 6,438
- In Stock ：
- 6,438
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Mounting Type :
- Surface Mount
- Current - Collector Cutoff (Max) :
- 1μA ICBO
- Emitter Base Voltage (VEBO) :
- 3V
- Max Power Dissipation :
- 200mW
- Published :
- 2007
- Max Collector Current :
- 50mA
- ECCN Code :
- EAR99
- Factory Lead Time :
- 23 Weeks
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Collector Emitter Breakdown Voltage :
- 15V
- Highest Frequency Band :
- ULTRA HIGH FREQUENCY B
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Configuration :
- Single
- Mount :
- Surface Mount
- Terminal Finish :
- Tin/Lead (Sn/Pb)
- Polarity/Channel Type :
- NPN
- Number of Pins :
- 3
- Pin Count :
- 3
- Packaging :
- Bulk
- Terminal Position :
- Dual
- Contact Plating :
- Lead, Tin
- Operating Temperature :
- -65°C~200°C TJ
- Vce Saturation (Max) @ Ib, Ic :
- 400mV @ 1mA, 10mA
- Transistor Element Material :
- SILICON
- Number of Terminations :
- 3
- Collector Emitter Voltage (VCEO) :
- 15V
- Terminal Form :
- NO LEAD
- Lifecycle Status :
- IN PRODUCTION (Last Updated: 1 month ago)
- Series :
- Military, MIL-PRF-19500/301
- Collector Base Voltage (VCBO) :
- 30V
- RoHS Status :
- Non-RoHS Compliant
- Number of Elements :
- 1
- Qualification Status :
- Qualified
- Package / Case :
- 3-SMD, Non-Standard
- Pbfree Code :
- No
- Power Dissipation :
- 200mW
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 20 @ 3mA 1V
- JESD-609 Code :
- e0
- Transistor Type :
- NPN
- Datasheets
- JAN2N918UB
NPN -65°C~200°C TJ 1μA ICBO 1 Elements 3 Terminations SILICON NPN 3-SMD, Non-Standard Bulk Surface Mount
JAN2N918UB Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 20 @ 3mA 1V.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 400mV @ 1mA, 10mA.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 3V.During maximum operation, collector current can be as low as 50mA volts.
JAN2N918UB Features
the DC current gain for this device is 20 @ 3mA 1V
the vce saturation(Max) is 400mV @ 1mA, 10mA
the emitter base voltage is kept at 3V
JAN2N918UB Applications
There are a lot of Microsemi Corporation
JAN2N918UB applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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