JAN2N6989

Manufacturer :

Microchip Technology

Product Category :

Transistors - Bipolar (BJT) - Arrays

Mount :

Through Hole

Max Power Dissipation :

1.5W

Published :

2007

Contact Plating :

Lead, Tin

Power - Max :

1.5W

Terminal Finish :

Tin/Lead (Sn/Pb)

Pbfree Code :

No

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Elements :

4

JEDEC-95 Code :

TO-116

Factory Lead Time :

23 Weeks

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Qualification Status :

Qualified

ECCN Code :

EAR99

Transistor Element Material :

SILICON

Operating Temperature :

-65°C~200°C TJ

DC Current Gain (hFE) (Min) @ Ic, Vce :

100 @ 150mA 10V

Vce Saturation (Max) @ Ib, Ic :

1V @ 50mA, 500mA

JESD-609 Code :

e0

Polarity/Channel Type :

NPN

Transistor Type :

4 NPN (Quad)

Terminal Position :

Dual

Pin Count :

14

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Reference Standard :

MIL-19500/559F

Number of Terminations :

14

Packaging :

Bulk

JESD-30 Code :

R-PDIP-T14

HTS Code :

8541.29.00.95

Lifecycle Status :

IN PRODUCTION (Last Updated: 3 weeks ago)

Package / Case :

14-DIP (0.300, 7.62mm)

Current - Collector Cutoff (Max) :

10μA ICBO

Configuration :

SEPARATE, 4 ELEMENTS

Collector Emitter Breakdown Voltage :

50V

Mounting Type :

Through Hole

Max Collector Current :

800mA

Series :

Military, MIL-PRF-19500/559

Transistor Application :

SWITCHING

Collector Emitter Voltage (VCEO) :

1V

Collector Base Voltage (VCBO) :

75V

RoHS Status :

Non-RoHS Compliant