JAN2N5795A
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- Mfr.Part #
- JAN2N5795A
- Manufacturer
- Microchip Technology
- Package / Case
- TO-78-6 Metal Can
- Datasheet
- Download
- Description
- NPN TRANSISTOR
- Stock
- 39,278
- In Stock ：
- 39,278
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - Bipolar (BJT) - Arrays
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 40 @ 150mA, 10V
- Package / Case :
- TO-78-6 Metal Can
- Frequency - Transition :
- -
- Current - Collector (Ic) (Max) :
- 600mA
- Supplier Device Package :
- TO-78-6
- Package :
- Bulk
- Mounting Type :
- Through Hole
- Base Product Number :
- 2N5795
- Transistor Type :
- 2 PNP (Dual)
- Vce Saturation (Max) @ Ib, Ic :
- 1.6V @ 50mA, 500mA
- Series :
- Military, MIL-PRF-19500/496
- Power - Max :
- 600mW
- Operating Temperature :
- -65°C ~ 175°C (TJ)
- Voltage - Collector Emitter Breakdown (Max) :
- 60V
- Current - Collector Cutoff (Max) :
- 10μA (ICBO)
- Product Status :
- Active
- Datasheets
- JAN2N5795A
2 PNP (Dual) -65°C ~ 175°C (TJ) 10µA (ICBO) TO-78-6 Metal Can Through Hole
JAN2N5795A Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 40 @ 150mA, 10V.When VCE saturation is 1.6V @ 50mA, 500mA, transistor means Ic has reached transistors maximum value (saturated).Supplier package TO-78-6 contains the product.The device has a 60V maximal voltage - Collector Emitter Breakdown.
JAN2N5795A Features
the DC current gain for this device is 40 @ 150mA, 10V
the vce saturation(Max) is 1.6V @ 50mA, 500mA
the supplier device package of TO-78-6
JAN2N5795A Applications
There are a lot of Microchip
JAN2N5795A applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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