JAN2N5682
- Mfr.Part #
- JAN2N5682
- Manufacturer
- Microchip Technology
- Package / Case
- TO-205AD, TO-39-3 Metal Can
- Datasheet
- Download
- Description
- TRANS NPN 120V 1A TO39
- Stock
- 32,565
- In Stock :
- 32,565
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Mount :
- Through Hole
- Factory Lead Time :
- 22 Weeks
- Operating Temperature :
- -65°C~200°C TJ
- Emitter Base Voltage (VEBO) :
- 4V
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 40 @ 250mA 2V
- Number of Pins :
- 3
- Power Dissipation :
- 1W
- Number of Terminations :
- 3
- Package / Case :
- TO-205AD, TO-39-3 Metal Can
- Terminal Form :
- Wire
- Current - Collector Cutoff (Max) :
- 10μA
- Transistor Application :
- AMPLIFIER
- Max Collector Current :
- 1A
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Terminal Finish :
- Tin/Lead (Sn/Pb)
- JESD-609 Code :
- e0
- Lifecycle Status :
- IN PRODUCTION (Last Updated: 1 month ago)
- Terminal Position :
- BOTTOM
- Packaging :
- Bulk
- Transition Frequency :
- 30MHz
- Transistor Element Material :
- SILICON
- Collector Emitter Voltage (VCEO) :
- 120V
- Transistor Type :
- NPN
- Contact Plating :
- Lead, Tin
- Pin Count :
- 2
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Published :
- 2002
- Collector Base Voltage (VCBO) :
- 120V
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Max Power Dissipation :
- 1W
- Mounting Type :
- Through Hole
- Vce Saturation (Max) @ Ib, Ic :
- 1V @ 50mA, 500mA
- Series :
- Military, MIL-PRF-19500/583
- ECCN Code :
- EAR99
- Number of Elements :
- 1
- Qualification Status :
- Qualified
- Polarity/Channel Type :
- NPN
- Configuration :
- Single
- RoHS Status :
- Non-RoHS Compliant
- Pbfree Code :
- No
- Datasheets
- JAN2N5682
NPN -65°C~200°C TJ 10μA 1 Elements 3 Terminations SILICON NPN TO-205AD, TO-39-3 Metal Can Bulk Through Hole
JAN2N5682 Overview
This device has a DC current gain of 40 @ 250mA 2V, which is the ratio between the base current and the collector current.A VCE saturation (Max) of 1V @ 50mA, 500mA means Ic has reached its maximum value(saturated).A high level of efficiency can be achieved if the base voltage of the emitter remains at 4V.As you can see, the part has a transition frequency of 30MHz.A maximum collector current of 1A volts is possible.
JAN2N5682 Features
the DC current gain for this device is 40 @ 250mA 2V
the vce saturation(Max) is 1V @ 50mA, 500mA
the emitter base voltage is kept at 4V
a transition frequency of 30MHz
JAN2N5682 Applications
There are a lot of Microsemi Corporation
JAN2N5682 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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