JAN2N5666

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Mfr.Part #
JAN2N5666
Manufacturer
Microchip Technology
Package / Case
TO-205AA, TO-5-3 Metal Can
Datasheet
Download
Description
TRANS NPN 200V 5A TO5
Stock
47,965
In Stock :
47,965

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Manufacturer :
Microchip Technology
Product Category :
Transistors - Bipolar (BJT) - Single
ECCN Code :
EAR99
Package / Case :
TO-205AA, TO-5-3 Metal Can
Lifecycle Status :
IN PRODUCTION (Last Updated: 1 month ago)
JESD-609 Code :
e0
Collector Base Voltage (VCBO) :
250V
Number of Elements :
1
DC Current Gain (hFE) (Min) @ Ic, Vce :
40 @ 1A 5V
Number of Terminations :
2
Current - Collector Cutoff (Max) :
200nA
Transistor Element Material :
SILICON
JESD-30 Code :
O-MBFM-P2
Vce Saturation (Max) @ Ib, Ic :
1V @ 5A, 1A
Max Power Dissipation :
1.2W
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Packaging :
Bulk
Published :
2007
Polarity/Channel Type :
NPN
Transistor Type :
NPN
RoHS Status :
Non-RoHS Compliant
Terminal Form :
PIN/PEG
Case Connection :
COLLECTOR
Power Dissipation :
1.2W
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Number of Pins :
3
Contact Plating :
Lead, Tin
Mount :
Through Hole
Qualification Status :
Qualified
Series :
Military, MIL-PRF-19500/455
Emitter Base Voltage (VEBO) :
6V
Mounting Type :
Through Hole
Operating Temperature :
-65°C~200°C TJ
Terminal Position :
BOTTOM
Terminal Finish :
Tin/Lead (Sn/Pb)
Reach Compliance Code :
not_compliant
Max Collector Current :
5A
Factory Lead Time :
22 Weeks
Collector Emitter Voltage (VCEO) :
200V
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Configuration :
Single
Transistor Application :
SWITCHING
Pbfree Code :
No
Pin Count :
2
Datasheets
JAN2N5666
Introducing Transistors - Bipolar (BJT) - Single Microchip Technology JAN2N5666 from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:TO-205AA, TO-5-3 Metal Can, Number of Terminations:2, Number of Pins:3, Mounting Type:Through Hole, Operating Temperature:-65°C~200°C TJ, JAN2N5666 pinout, JAN2N5666 datasheet PDF, JAN2N5666 amp .Beyond Transistors - Bipolar (BJT) - Single Microchip Technology JAN2N5666 ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.



NPN -65°C~200°C TJ 200nA 1 Elements 2 Terminations SILICON NPN TO-205AA, TO-5-3 Metal Can Bulk Through Hole

JAN2N5666 Overview


The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 40 @ 1A 5V.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 1V @ 5A, 1A.If the emitter base voltage is kept at 6V, a high level of efficiency can be achieved.Collector current can be as low as 5A volts at its maximum.

JAN2N5666 Features


the DC current gain for this device is 40 @ 1A 5V
the vce saturation(Max) is 1V @ 5A, 1A
the emitter base voltage is kept at 6V


JAN2N5666 Applications


There are a lot of Microsemi Corporation
JAN2N5666 applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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