JAN2N5415S
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- Mfr.Part #
- JAN2N5415S
- Manufacturer
- Microchip Technology
- Package / Case
- TO-205AD, TO-39-3 Metal Can
- Datasheet
- Download
- Description
- TRANS PNP 200V 1A TO39
- Stock
- 44,645
- In Stock ：
- 44,645
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Terminal Position :
- BOTTOM
- Configuration :
- Single
- Transistor Type :
- PNP
- Terminal Form :
- Wire
- Package / Case :
- TO-205AD, TO-39-3 Metal Can
- Qualification Status :
- Qualified
- Transistor Element Material :
- SILICON
- Max Power Dissipation :
- 750mW
- Power Dissipation :
- 750mW
- Operating Temperature :
- -65°C~200°C TJ
- Mounting Type :
- Through Hole
- RoHS Status :
- Non-RoHS Compliant
- Factory Lead Time :
- 22 Weeks
- Number of Elements :
- 1
- JESD-609 Code :
- e0
- Packaging :
- Bulk
- Pin Count :
- 3
- JEDEC-95 Code :
- TO-5
- Max Collector Current :
- 1A
- Case Connection :
- COLLECTOR
- Series :
- Military, MIL-PRF-19500/485
- Lifecycle Status :
- IN PRODUCTION (Last Updated: 1 month ago)
- Emitter Base Voltage (VEBO) :
- 6V
- JESD-30 Code :
- O-MBCY-W4
- Number of Terminations :
- 4
- Collector Emitter Voltage (VCEO) :
- 200V
- Pbfree Code :
- No
- Polarity/Channel Type :
- PNP
- Vce Saturation (Max) @ Ib, Ic :
- 2V @ 5mA, 50mA
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 30 @ 50mA 10V
- Published :
- 2002
- Number of Pins :
- 3
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Radiation Hardening :
- No
- Terminal Finish :
- Tin/Lead (Sn/Pb)
- Current - Collector Cutoff (Max) :
- 1mA
- Collector Base Voltage (VCBO) :
- 200V
- Mount :
- Through Hole
- ECCN Code :
- EAR99
- Transistor Application :
- SWITCHING
- Datasheets
- JAN2N5415S
PNP -65°C~200°C TJ 1mA 1 Elements 4 Terminations SILICON PNP TO-205AD, TO-39-3 Metal Can Bulk Through Hole
JAN2N5415S Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 30 @ 50mA 10V DC current gain.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Keeping the emitter base voltage at 6V can result in a high level of efficiency.When collector current reaches its maximum, it can reach 1A volts.
JAN2N5415S Features
the DC current gain for this device is 30 @ 50mA 10V
the vce saturation(Max) is 2V @ 5mA, 50mA
the emitter base voltage is kept at 6V
JAN2N5415S Applications
There are a lot of Microsemi Corporation
JAN2N5415S applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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